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    Ultra low melt metal nanoparticle composition for thick-film applications
    7.
    发明授权
    Ultra low melt metal nanoparticle composition for thick-film applications 有权
    用于厚膜应用的超低熔融金属纳米颗粒组合物

    公开(公告)号：US08057849B2

    公开(公告)日：2011-11-15

    申请号：US12631153

    申请日：2009-12-04

    申请人： Ping Liu ,  Yiliang Wu ,  Anthony J. Wigglesworth ,  Nan-Xing Hu

    发明人： Ping Liu ,  Yiliang Wu ,  Anthony J. Wigglesworth ,  Nan-Xing Hu

    IPC分类号： B05D5/12

    CPC分类号： H01B1/22 ,  B22F1/0022 ,  B22F1/0074 ,  B82Y30/00 ,  H05K1/095 ,  H05K1/097 ,  H05K2201/0224 ,  H05K2203/122

    摘要： A method of forming conductive features on a substrate, the method includes reacting a metal compound with a reducing agent in the presence of a stabilizer in a reaction mixture comprising the metal compound, the reducing agent, and the stabilizer, wherein the reaction mixture is substantially free of solvent, to form a plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles. After isolating the plurality of metal nanoparticles, a liquid composition that includes a polymeric binder, a liquid and the plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles is deposited on a substrate by a liquid deposition technique to form a deposited composition. The deposited composition is then heated to form conductive features on the substrate.

    摘要翻译： 一种在基材上形成导电特征的方法，所述方法包括使金属化合物与还原剂在稳定剂存在下在包含金属化合物，还原剂和稳定剂的反应混合物中反应，其中反应混合物基本上 不含溶剂，在金属纳米颗粒的表面上形成多个具有稳定剂分子的金属纳米颗粒。 在分离多个金属纳米颗粒之后，通过液体沉积技术将包含聚合物粘合剂，液体和金属纳米颗粒表面上的稳定剂分子的多种金属纳米颗粒的液体组合物通过液体沉积技术沉积在基底上，形成 沉积组成。 然后将沉积的组合物加热以在基底上形成导电特征。

    Semiconductor compound
    8.
    发明授权
    Semiconductor compound 有权
    半导体化合物

    公开(公告)号：US09123902B2

    公开(公告)日：2015-09-01

    申请号：US13024446

    申请日：2011-02-10

    申请人： Anthony J. Wigglesworth ,  Yiliang Wu ,  Ping Liu

    发明人： Anthony J. Wigglesworth ,  Yiliang Wu ,  Ping Liu

    IPC分类号： H01L51/00 ,  C07D495/06 ,  H01L51/05

    CPC分类号： H01L51/0074 ,  C07D495/06 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545

    摘要： A thiaxanthenothiaxanthene compound of Formula (I): wherein R1 to R10 are independently selected from the group consisting of hydrogen, an alkyl group, a substituted alkyl group, an alkoxy group, an alkylthio group, an alkenyl group, a substituted alkenyl group, an ethynyl group, a substituted ethynyl group, an aryl group, a substituted aryl group, a heteroaryl group, a substituted heteroaryl group, a trialkylsilyl group, a fluorohydrocarbon group, a cyano group and a halogen; and wherein the semiconductor of Formula (I) is predominantly crystalline or liquid crystalline. The compounds are designed to ensure air stability, good solubility, and high mobility.

    摘要翻译： 式（I）的噻吩并噻吩类化合物：其中R 1至R 10独立地选自氢，烷基，取代的烷基，烷氧基，烷硫基，烯基，取代的烯基， 乙炔基，取代乙炔基，芳基，取代芳基，杂芳基，取代杂芳基，三烷基甲硅烷基，氟代烃基，氰基和卤素; 并且其中式（I）的半导体主要是结晶或液晶。 这些化合物被设计成确保空气稳定性，良好的溶解性和高迁移率。

    Semiconductor composition for high performance organic devices
    10.
    发明授权
    Semiconductor composition for high performance organic devices 有权
    用于高性能有机器件的半导体组成

    公开(公告)号：US08558109B2

    公开(公告)日：2013-10-15

    申请号：US13424204

    申请日：2012-03-19

    申请人： Anthony J. Wigglesworth ,  Yiliang Wu

    发明人： Anthony J. Wigglesworth ,  Yiliang Wu

    IPC分类号： H01L31/00

    CPC分类号： H01L51/0036 ,  H01L51/0558 ,  Y02E10/549

    摘要： A copolymer having a structure represented by: wherein R1 and R2 are independently selected from a hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group; Ar1 and Ar2 are independently an aromatic or heteroaromatic group including about 4 to about 30 carbon atoms, and can be optionally substituted; a and b are independently an integer from 1 to about 4; Ar3 and Ar4 are independently an aromatic or heteroaromatic group comprising about 4 to about 20 carbon atoms, and can be optionally substituted; c and e are independently an integer from about 0 to about 2; d is 1 to 4 and the carbon-carbon double bond is in the E-configuration; and n represents a number from 2 to about 5,000.

    摘要翻译： 具有以下结构的共聚物：其中R1和R2独立地选自氢，取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂芳基; Ar 1和Ar 2独立地是包括约4至约30个碳原子的芳族或杂芳族基团，并且可以任选被取代; a和b独立地为1至约4的整数; Ar 3和Ar 4独立地是包含约4至约20个碳原子的芳族或杂芳基，并且可以任选被取代; c和e独立地为约0至约2的整数; d为1〜4，碳 - 碳双键为E构型; n表示2〜5000的数。