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公开(公告)号：US20110108743A1
公开(公告)日：2011-05-12
申请号：US12903490
申请日：2010-10-13
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
摘要： A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunnelling time of carriers from said quantum dot to said first electrical contact and the tunnelling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
摘要翻译： 一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电 触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿 从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出 说光子源。
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公开(公告)号：US20110242632A1
公开(公告)日：2011-10-06
申请号：US13039893
申请日：2011-03-03
CPC分类号： G06N99/002 , B82Y10/00
摘要： A component comprising a qubit and a controller for said qubit, said component comprising a quantum dot and an excitation portion configured to produce a neutral exciton state in said quantum dot to form said qubit, the component further comprising a measuring unit to make an optical measurement relating to the orientation of said state, wherein said controller comprises voltage source coupled to electrical contacts configured to apply a modulated electric field across said quantum dot, wherein the modulation is faster than the decay time of said neutral exciton state.
摘要翻译： 一种包括量子位的组件和用于所述量子位的控制器，所述组件包括量子点和激励部分，其被配置为在所述量子点中产生中性激子状态以形成所述量子位，所述组件还包括测量单元以进行光学测量 涉及所述状态的取向，其中所述控制器包括耦合到电触点的电压源，所述电触点被配置为在所述量子点上施加调制电场，其中所述调制比所述中性激子状态的衰减时间快。
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公开(公告)号：US20120326624A1
公开(公告)日：2012-12-27
申请号：US13419525
申请日：2012-03-14
IPC分类号： H05B37/02
CPC分类号： H01S5/18394 , B82Y10/00 , B82Y20/00 , H01S5/041 , H01S5/06216 , H01S5/105 , H01S5/18319 , H01S5/18327 , H01S5/18369 , H01S5/3412
摘要： A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the quantum dot after a predetermined time duration, the carrier injection means injecting carriers which are configured to allow emission of radiation by radiative recombination
摘要翻译： 一种包括光子源体的光子源，所述光子源体包括至少一个量子点; 用于将载流子注入所述至少一个量子点的载流子注入装置和在预定持续时间之后改变量子点内的载流子状态的装置，载流子注入装置注入被配置为允许通过 辐射重组
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公开(公告)号：US20120292590A1
公开(公告)日：2012-11-22
申请号：US13475423
申请日：2012-05-18
摘要： An optical component comprising an emitter and a solid reflector, said reflector having a convex outer surface, said emitter being located within the solid reflector, the emitter being configured to emit radiation via an electric dipole transition, the dipole having a dipole axis being orientated at an angle of 45 degrees or less to the surface normal at the apex of the reflector.
摘要翻译： 一种包括发射器和固体反射器的光学部件，所述反射器具有凸的外表面，所述发射器位于所述固体反射器内，所述发射器经配置以经由电偶极子跃迁发射辐射，所述偶极子具有定向于 与反射体的顶点处的表面法线成45度以下的角度。
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