Ion beam measurement apparatus and method
    1.
    发明授权
    Ion beam measurement apparatus and method 有权
    离子束测量装置及方法

    公开(公告)号:US07170067B2

    公开(公告)日:2007-01-30

    申请号:US11093930

    申请日:2005-03-30

    IPC分类号: H01J49/00

    摘要: The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

    摘要翻译: 本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。 本发明的装置能够选择性地测量离子束的两个特性,包括例如减速离子束中的电流和能量污染水平。 本发明的第一方面提供了一种离子束测量装置,其包括用于接收离子束的孔,邻近孔径设置的负偏置电极,邻近负偏置电极设置的正偏置电极, 正偏置电极和集电极,其中选择性偏置电极可以选择性地被负偏置或正偏置。

    Ion beam neutral detection
    2.
    发明申请
    Ion beam neutral detection 有权
    离子束中性检测

    公开(公告)号:US20050178981A1

    公开(公告)日:2005-08-18

    申请号:US11056445

    申请日:2005-02-11

    IPC分类号: G21K5/10 H01J37/08 H01J37/317

    摘要: An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization

    摘要翻译: 公开了一种离子束中性检测器系统,包括检测器系统的离子注入机系统和检测离子束中性物质的方法,其确保离子注入满足污染要求。 检测器包括一个位于离子注入机系统中的能量污染监测器。 本发明的方法包括使用离子束植入工件,并且周期性地检测离子束中的离子束中性粒子,使得可以对离子注入机系统进行调整以进行优化

    Ion beam measurement apparatus and method
    3.
    发明申请
    Ion beam measurement apparatus and method 有权
    离子束测量装置及方法

    公开(公告)号:US20060192134A1

    公开(公告)日:2006-08-31

    申请号:US11093930

    申请日:2005-03-30

    IPC分类号: G01K1/08

    摘要: The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

    摘要翻译: 本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。 本发明的装置能够选择性地测量离子束的两个特性,包括例如减速离子束中的电流和能量污染水平。 本发明的第一方面提供了一种离子束测量装置,其包括用于接收离子束的孔,邻近孔径设置的负偏置电极,邻近负偏置电极设置的正偏置电极, 正偏置电极和集电极,其中选择性偏置电极可以选择性地被负偏置或正偏置。

    Techniques for plasma injection
    4.
    发明授权
    Techniques for plasma injection 有权
    等离子体注入技术

    公开(公告)号:US07723707B2

    公开(公告)日:2010-05-25

    申请号:US11781700

    申请日:2007-07-23

    IPC分类号: G21G1/00

    摘要: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中,这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列,第一阵列位于离子束路径的第一侧上,第二阵列位于第二阵列的第二阵列上 离子束路径的一侧,第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源,其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    TECHNIQUES FOR PLASMA INJECTION
    5.
    发明申请
    TECHNIQUES FOR PLASMA INJECTION 有权
    等离子体注射技术

    公开(公告)号:US20090026390A1

    公开(公告)日:2009-01-29

    申请号:US11781700

    申请日:2007-07-23

    IPC分类号: H01J37/08

    摘要: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中,这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列,第一阵列位于离子束路径的第一侧上,第二阵列位于第二阵列的第二阵列上 离子束路径的一侧,第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源,其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。