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公开(公告)号：US06660576B2
公开(公告)日：2003-12-09
申请号：US10096293
申请日：2002-03-11
IPC分类号： H01L2184
CPC分类号： H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/6675 , H01L29/78672
摘要： A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor substrate; creating a first condition in the first area of the semiconductor film; selecting a second mask having a second mask pattern; projecting the laser beam through the second mask to anneal a second area of the semiconductor film; and, creating a second condition in the second area of the semiconductor film, different than the first condition. More specifically, when the substrate material is silicon, the first and second conditions concern the creation of crystalline material with a quantitative measure of lattice mismatch between adjacent crystal domains. For example, the lattice mismatch between adjacent crystal domains can be measured as a number of high-angle grain boundaries per area, where high-angle grain boundaries are defined as boundaries separating adjacent crystal domains with a crystal lattice mismatch angle in the range between 15 and 90 degrees. To continue the example, forming a first number of high-angle grain boundaries per area in the first area may include forming adjacent high-angle grain boundaries separated by a first distance, while forming a second number of high-angle grain boundaries per area in the second area may include forming adjacent high-angle grain boundaries separated by a second distance, greater than the first distance.
摘要翻译： 提供了一种制造可变质量基板材料的基板和方法。 该方法包括：选择具有第一掩模图案的第一掩模; 将激光束投射穿过所述第一掩模以退火半导体衬底的第一区域; 在半导体膜的第一区域中形成第一条件; 选择具有第二掩模图案的第二掩模; 将激光束投影通过第二掩模，以退火半导体膜的第二区域; 并且在半导体膜的第二区域中产生与第一条件不同的第二条件。 更具体地，当衬底材料是硅时，第一和第二条件涉及通过定量测量相邻晶体畴之间的晶格失配来产生结晶材料。 例如，相邻晶体畴之间的晶格失配可以作为每个面积的高角度晶界的数量来测量，其中高角度晶界被定义为将相邻晶体域之间的晶界分离的边界分隔在15 和90度。 为了继续该示例，在第一区域中每区域形成第一数量的高角度晶界可以包括形成分开第一距离的相邻高角度晶界，同时在每个区域形成第二数量的高角度晶界 第二区域可以包括形成大于第一距离的相隔的第二距离的相邻高角度晶界。
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公开(公告)号：US06733931B2
公开(公告)日：2004-05-11
申请号：US10099376
申请日：2002-03-13
IPC分类号： H01L2100
CPC分类号： H01L21/0268 , B23K26/066 , B23K2101/40 , H01L21/2026 , H01L21/268 , Y10S430/146
摘要： A system and method are provided for laser irradiating a semiconductor substrate using a multi-pattern mask. The method comprises: exposing a semiconductor substrate to laser light projected through a multi-pattern mask; advancing the mask and substrate in a first direction to sequentially expose adjacent areas of the substrate to each of the mask patterns in a first predetermined order; and, advancing the mask and substrate in a second direction, opposite the first direction, to sequentially expose adjacent areas of the substrate to each of the mask patterns in the first order. In one aspect, the method further comprises: forming a multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction and a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Alternately, the method comprises: forming a first multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction; and, forming a second multi-pattern mask having a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Then, advancing the mask and substrate in the first direction includes using the first mask, and advancing the mask and substrate in the second direction, opposite the first direction, includes using the second mask.
摘要翻译： 提供一种用于使用多图案掩模激光照射半导体衬底的系统和方法。 该方法包括：将半导体衬底暴露于通过多图案掩模投影的激光; 在第一方向上推进掩模和衬底，以按照第一预定顺序顺序地将衬底的相邻区域暴露于每个掩模图案; 并且在与第一方向相反的第二方向上前进掩模和衬底，以一级顺序地将衬底的相邻区域依次暴露于每个掩模图案。 一方面，该方法还包括：形成具有相对于第一方向以一级对准的第一多个图案的多图案掩模和对应于第一多个图案的第二多个图案，第二多个图案在第一 相对于第二个方向的顺序。 或者，该方法包括：形成具有相对于第一方向以第一顺序排列的第一多个图案的第一多图案掩模; 并且形成具有与所述第一多个图案对应的第二多个图案的第二多图案掩模，所述第一多个图案相对于所述第二方向以第一顺序排列。 然后，在第一方向上推进掩模和衬底包括使用第一掩模，并且使掩模和衬底沿与第一方向相反的第二方向前进，包括使用第二掩模。
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公开(公告)号：US06903370B2
公开(公告)日：2005-06-07
申请号：US10705279
申请日：2003-11-10
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/20
CPC分类号： H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/6675 , H01L29/78672
摘要： A substrate and a method for fabricating variable quality substrate materials are provided. The method comprises: selecting a first mask having a first mask pattern; projecting a laser beam through the first mask to anneal a first area of semiconductor substrate; creating a first condition in the first area of the semiconductor film; selecting a second mask having a second mask pattern; projecting the laser beam through the second mask to anneal a second area of the semiconductor film; and, creating a second condition in the second area of the semiconductor film, different than the first condition. More specifically, when the substrate material is silicon, the first and second conditions concern the creation of crystalline material with a quantitative measure of lattice mismatch between adjacent crystal domains. For example, the lattice mismatch between adjacent crystal domains can be measured as a number of high-angle grain boundaries per area.
摘要翻译： 提供了一种制造可变质量基板材料的基板和方法。 该方法包括：选择具有第一掩模图案的第一掩模; 将激光束投射穿过所述第一掩模以退火半导体衬底的第一区域; 在半导体膜的第一区域中形成第一条件; 选择具有第二掩模图案的第二掩模; 将激光束投影通过第二掩模，以退火半导体膜的第二区域; 并且在半导体膜的第二区域中产生与第一条件不同的第二条件。 更具体地，当衬底材料是硅时，第一和第二条件涉及通过定量测量相邻晶体畴之间的晶格失配来产生结晶材料。 例如，相邻晶体畴之间的晶格失配可以被测量为每个面积的高角度晶界数。
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4.发明授权Method for suppressing energy spikes of a partially-coherent beam using triangular end-regions 有权使用三角形端部区域抑制部分相干光束的能量尖峰的方法公开(公告)号：US07046715B2
公开(公告)日：2006-05-16
申请号：US10883381
申请日：2004-07-01
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature with the corner region to reduce energy spikes projected on a substrate. An alternative method is provided, wherein the corner region is modified such that it is replaced by a more tapered shaped region, preferably a triangle. Also provided, are a variety of mask designs incorporating both corner regions, with and without one or more blocking features, and triangular regions, with or without one or more blocking features. The mask designs provide examples of mask modifications that may be used to reduce energy spikes.
摘要翻译： 因此，提供了一种抑制能量尖峰的方法，包括：通过具有包括具有边缘的拐角区域的狭缝图案的掩模投射激光束，并且具有角部区域的阻挡特征以减少投射在基板上的能量尖峰。 提供了一种替代方法，其中拐角区域被修改为使得其被更锥形的区域，优选三角形替代。 还提供了包括具有和不具有一个或多个阻挡特征的两个拐角区域以及具有或不具有一个或多个阻塞特征的三角形区域的各种掩模设计。 掩模设计提供了可用于减少能量尖峰的掩模修改的示例。
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公开(公告)号：US06792029B2
公开(公告)日：2004-09-14
申请号：US10113144
申请日：2002-03-27
IPC分类号： H01S308
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： Accordingly, a method of suppressing energy spikes is provided comprising projecting a laser beam through a mask having a slit pattern comprising a corner region with edges, and a blocking feature with the corner region to reduce energy spikes projected on a substrate. An alternative method is provided, wherein the corner region is modified such that it is replaced by a more tapered shaped region, preferably a triangle. Also provided, are a variety of mask designs incorporating both corner regions, with and without one or more blocking features, and triangular regions, with or without one or more blocking features. The mask designs provide examples of mask modifications that may be used to reduce energy spikes.
摘要翻译： 因此，提供了一种抑制能量尖峰的方法，包括：通过具有包括具有边缘的拐角区域的狭缝图案的掩模投射激光束，并且具有角部区域的阻挡特征以减少投射在基板上的能量尖峰。 提供了一种替代方法，其中拐角区域被修改为使得其被更锥形的区域，优选三角形替代。 还提供了包括具有和不具有一个或多个阻挡特征的两个拐角区域以及具有或不具有一个或多个阻塞特征的三角形区域的各种掩模设计。 掩模设计提供了可用于减少能量尖峰的掩模修改的示例。
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