Global bit line pre-charging and data latching in multi-banked memories using a delayed reset latch

    公开(公告)号:US10217494B2

    公开(公告)日:2019-02-26

    申请号:US15635825

    申请日:2017-06-28

    申请人: Apple Inc.

    IPC分类号: G11C7/10 G11C7/12 G11C8/12

    摘要: A memory that includes multiple banks, each of which include multiple data storage cells, is disclosed. A decoder circuit may be configured to receive and decode information indicative of an address, and select a particular bank based on the decoded information. A first latch circuit coupled to a particular global bit line, which is, in turn, coupled to the particular bank, may generate multiple local clock signals using the decoded information and store data based on a voltage level of the particular global bit line using the plurality of local clock signals. Other circuits may also pre-charge the particular global bit line using a particular local clock signal of the plurality of local clock signals.

    Performing Multiple Bit Computation and Convolution in Memory

    公开(公告)号:US20220156045A1

    公开(公告)日:2022-05-19

    申请号:US16953093

    申请日:2020-11-19

    申请人: Apple Inc.

    摘要: A compute-memory circuit included in a computer system includes multiple data storage cells and multiplier circuits. The data storage cells store weight values associated with a first operand. The multiplier circuits are coupled to a global bit line and receive the weight values via local bit lines coupled to the data storage cells. Using the received weight values and activation signals indicative of a second operand, the multiplier circuits modify a voltage level of global bit line. The resultant voltage level on the global bit line is indicative of a product of the first and second operands, and can be converted to a digital value using an analog-to-digital converter circuit. By performing computation on global rather than local bit lines, standard data storage cells can be employed, improving the area efficiency of the compute-memory circuit.

    GLOBAL BIT LINE PRE-CHARGING AND DATA LATCHING IN MULTI-BANKED MEMORIES USING A DELAYED RESET LATCH

    公开(公告)号:US20190005993A1

    公开(公告)日:2019-01-03

    申请号:US15635825

    申请日:2017-06-28

    申请人: Apple Inc.

    IPC分类号: G11C7/12 G11C8/12

    摘要: A memory that includes multiple banks, each of which include multiple data storage cells, is disclosed. A decoder circuit may be configured to receive and decode information indicative of an address, and select a particular bank based on the decoded information. A first latch circuit coupled to a particular global bit line, which is, in turn, coupled to the particular bank, may generate multiple local clock signals using the decoded information and store data based on a voltage level of the particular global bit line using the plurality of local clock signals. Other circuits may also pre-charge the particular global bit line using a particular local clock signal of the plurality of local clock signals.