公开(公告)号：US20200343123A1

公开(公告)日：2020-10-29

申请号：US16791875

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Edward HAYWOOD ,  Adam FISCHBACH ,  Timothy Joseph FRANKLIN

IPC: H01L21/683 ,  H01J37/32

Abstract: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.

公开(公告)号：US20210005500A1

公开(公告)日：2021-01-07

申请号：US16913969

申请日：2020-06-26

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Edward L. HAYWOOD ,  Samuel E. GOTTHEIM ,  Pramit MANNA ,  Kien N. CHUC ,  Adam FISCHBACH ,  Abhijit B. MALLICK ,  Timothy J. FRANKLIN

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3213

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

公开(公告)号：US20230154726A1

公开(公告)日：2023-05-18

申请号：US18155424

申请日：2023-01-17

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Tza-Jing GUNG ,  Samuel E. GOTTHEIM ,  Timothy Joseph FRANKLIN ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32082 ,  C23C16/505 ,  C23C16/455 ,  H01L21/3065 ,  H01J37/32623 ,  H01L21/02274 ,  H01J37/32715

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

公开(公告)号：US20230139431A1

公开(公告)日：2023-05-04

申请号：US18088889

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Samuel E. GOTTHEIM ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Eswaranand VENKATASUBRAMANIAN ,  Timothy Joseph FRANKLIN ,  Edward HAYWOOD ,  Stephen C. GARNER ,  Adam FISCHBACH

IPC: H01J37/32 ,  C23C16/509

Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.

公开(公告)号：US20200370177A1

公开(公告)日：2020-11-26

申请号：US16876845

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Adam FISCHBACH ,  Edward HAYWOOD ,  Abhijit B. MALLICK ,  Pramit MANNA ,  Carlaton WONG ,  Stephen C. GARNER ,  Eswaranand VENKATASUBRAMANIAN

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/46 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.