公开(公告)号：US10103288B2

公开(公告)日：2018-10-16

申请号：US14726253

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： David P. Bour ,  Alain Duboust ,  Alexey Goder

IPC: H01L33/00 ,  G01K11/20 ,  H01L21/67 ,  H01L21/66 ,  C30B25/16 ,  C30B29/40 ,  H01L33/06 ,  H01L33/32 ,  H01L21/02

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

公开(公告)号：US20150263222A1

公开(公告)日：2015-09-17

申请号：US14726253

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： David P. Bour ,  Alain Duboust ,  Alexey Goder

IPC: H01L33/00 ,  G01K11/20 ,  H01L33/06 ,  H01L33/32 ,  C30B25/16 ,  C30B29/40

CPC classification number: H01L33/0075 ,  C30B25/16 ,  C30B29/40 ,  G01K11/20 ,  G01K2217/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/67196 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract translation: 用于控制外延生长参数的设备和方法，例如在制造发光二极管（LED）期间。 实施例包括生长后的III-V族薄膜的PL测量，而在高温下的基底处于多腔聚集工具的转移室中。 在其它实施例中，在衬底设置在传送室中的同时，执行膜厚度测量，非接触电阻率测量以及颗粒和/或粗糙度测量。 通过基于从设置在III-V族III膜以下的GaN基底层的发射来估计升高的温度，在传送室中执行的一个或多个测量值被温度校正到室温。 在其他实施例中，温度校正基于由所收集的白光反射光谱确定的GaN基底层的吸收带边缘。 然后使用温度校正计量来控制生长过程。