公开(公告)号：US09305780B2

公开(公告)日：2016-04-05

申请号：US14561525

申请日：2014-12-05

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Mary Edmonds ,  Andrew C. Kummel ,  Atif M. Noori

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

Abstract translation: 在半导体或金属表面上沉积硅的方法包括在50℃和300℃之间的温度下循环给予硅烷和氯代硅烷前体，并在三到二十三个循环之间持续循环，直到通过终止 具有Si-H基团的表面位点。 层形成方法包括在衬底上沉积氯硅烷以形成第一层，其中衬底选自In x Ga 1-x As，In x Ga 1-x Sb，In x Ga 1-x N，Si Ge和Ge，其中X在0.1和 0.99。 所述方法可以包括脉动硅烷以形成硅单层并循环给予氯硅烷和硅烷。 层状组合物包括选自In x Ga 1-x As，In x Ga 1-x Sb，In x Ga 1-x N，Si Ge和Ge中的第一层，其中X为0.1至0.99，第二层为第二层，其中第二层包含Si-H 和Si-OH。

公开(公告)号：US09607920B2

公开(公告)日：2017-03-28

申请号：US15060795

申请日：2016-03-04

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Mary Edmonds ,  Andrew C. Kummel ,  Atif M. Noori

IPC: H01L21/02 ,  H01L23/31 ,  C23C16/24 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/24 ,  C23C16/45523 ,  H01L21/02123 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/0262 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99. The methods may include pulsing a silane to form a silicon monolayer and cycling dosing of the chlorosilane and the silane. Layered compositions include a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

公开(公告)号：US09443728B2

公开(公告)日：2016-09-13

申请号：US14461191

申请日：2014-08-15

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Atif M. Noori ,  David K. Carlson

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/324

CPC classification number: H01L21/02664 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/67011 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Abstract translation: 本公开的实施方式一般涉及在基板上形成膜的方法和装置。 更具体地，本公开的实施方案涉及用于晶体膜的异质外延生长的方法和装置。 在一个实施方案中，提供了在衬底上的应变松弛缓冲层（SRB）层的异质外延沉积的方法。 该方法包括在不同的衬底上外延沉积缓冲层，快速加热缓冲层以使缓冲层松弛，快速冷却缓冲层，并确定缓冲层是否达到所需的厚度。