公开(公告)号：US20130210240A1

公开(公告)日：2013-08-15

申请号：US13764137

申请日：2013-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

公开(公告)号：US20170316930A1

公开(公告)日：2017-11-02

申请号：US15650469

申请日：2017-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

公开(公告)号：US20140216585A1

公开(公告)日：2014-08-07

申请号：US14154346

申请日：2014-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS SOFIAN TJANDRA ,  KALYANJIT GHOSH ,  CHRISTOPHER S. OLSEN ,  UMESH M. KELKAR

IPC: B01F13/02

CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/87652

Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.

Abstract translation: 本文提供了用于混合和输送工艺气体的方法和装置。 在一些实施例中，气体注入装置包括细长顶部增压室，其包括第一气体入口; 设置在所述顶部增压室下方并支撑所述顶部增压室的细长底部增压室，所述底部增压室包括第二气体入口; 多个第一导管，其设置穿过所述底部集气室，并且具有流体耦合到所述顶部增压室的第一端和设置在所述底部增压室下方的第二端; 以及多个第二导管，其具有流体地联接到所述底部增压室的第一端和设置在所述底部增压室下方的第二端; 其中所述底部增压室的下端适于将所述气体注入装置流体地耦合到混合室，使得所述多个第一导管的第二端和所述多个第二导管的所述第二端与所述混合室流体连通 。

公开(公告)号：US20140227888A1

公开(公告)日：2014-08-14

申请号：US14255471

申请日：2014-04-17

Applicant: Applied Materials, Inc.

Inventor： CHRISTOPHER S. OLSEN ,  Yoshitaka Yokota

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3211 ,  H01L27/11524

Abstract: Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate.

Abstract translation: 本文描述的实施例通常涉及用于制造闪存设备的方法。 在一个实施例中，该方法包括在远程等离子体施加器中产生包含含氮自由基的等离子体，其将包含含氮自由基的等离子体流入设置半导体器件的处理室的处理区域，其中半导体器件具有 包含其上形成的氧化物层的衬底，将氧化物层的暴露表面暴露于含氮自由基，并在衬底的氧化物层的暴露表面中引入氮。

公开(公告)号：US20150206777A1

公开(公告)日：2015-07-23

申请号：US14673320

申请日：2015-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： AGUS TJANDRA ,  CHRISTOPHER S. OLSEN ,  JOHANES SWENBERG ,  LARA HAWRYLCHAK

IPC: H01L21/67

CPC classification number: H01L21/67098 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract translation: 本文提供了用于改善处理室中金属选择性氧化的方法和装置。 在一些实施例中，氧化设置在具有由一个或多个室壁限定的处理容积的处理室中的衬底的第一表面的方法可以包括将衬底暴露于氧化气体以氧化第一表面; 并且主动地加热所述一个或多个室壁中的至少一个，以将所述一个或多个室壁的温度升高至至少水的露点的第一温度，同时将所述衬底暴露于所述氧化气体。

公开(公告)号：US20140273539A1

公开(公告)日：2014-09-18

申请号：US14206766

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： HENG PAN ,  MATTHEW SCOTT ROGERS ,  CHRISTOPHER S. OLSEN

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract translation: 本文提供了处理电介质层的方法的实施例。 在一些实施例中，处理设置在处理室中的衬底上的电介质层的方法包括：（a）将电介质层暴露于在等离子体中形成的活性自由基物质第一段时间; （b）将介电层加热至约900摄氏度至约1200摄氏度的峰值温度; 和（c）将峰值温度保持约1秒至约20秒的第二时间段。