公开(公告)号：US20240280913A1

公开(公告)日：2024-08-22

申请号：US18171598

申请日：2023-02-20

Applicant: Applied Materials, Inc.

Inventor： Chi-Ming TSAI

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G03F7/70516 ,  G03F7/70641

Abstract: Embodiments of the present disclosure relate to methods, systems and apparatus for improving dose uniformity of the photolithography system. The method includes projecting a write beam from a projection unit toward a mask to form a plurality of incident lights, adjusting the projection unit to create a distribution of incidence angles corresponding to the incident lights, focusing the plurality of incident lights toward a photoresist layer disposed over a substrate with a lens, removing portions of the photoresist layer to form the device pattern, and forming structures on the substrate corresponding to the device pattern. The mask has a mask pattern corresponding to a device pattern. By focusing the plurality of incident lights towards the photoresist, a swing curve of the incident lights interfere to reduce a total swing curve of the incident lights to develop a photoresist layer with a photoresist pattern corresponding to the device pattern.

公开(公告)号：US20240126180A1

公开(公告)日：2024-04-18

申请号：US18484016

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Jang Fung CHEN ,  Thomas L. LAIDIG ,  Chung-Shin KANG ,  Chi-Ming TSAI ,  Wei-Ning SHEN

IPC: G03F7/00

CPC classification number: G03F7/70508

Abstract: Embodiments of the present disclosure relate to a system, a software application, and methods of digital lithography for semiconductor packaging. The method includes comparing positions of vias and via locations, generating position data based on the comparing the positions of vias and the via locations, providing the position data of the vias to a digital lithography device, updating a redistributed metal layer (RDL) mask pattern according to the position data such that RDL locations correspond to the positions of the vias, and projecting the RDL mask pattern with the digital lithography device.

公开(公告)号：US20250068082A1

公开(公告)日：2025-02-27

申请号：US18942941

申请日：2024-11-11

Applicant: Applied Materials, Inc.

Inventor： YingChiao WANG ,  Chi-Ming TSAI ,  Chun-chih CHUANG ,  Yung Peng HU

IPC: G03F7/00 ,  G02B26/08

Abstract: Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. In one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. The plurality of shots exposes the photoresist layer to an intensity of light emitted from the image projection system. The local transmittance rate of the plurality of shots within an exposure area is varied to form varying step heights in the exposure area of the photoresist layer.

公开(公告)号：US20230314953A1

公开(公告)日：2023-10-05

申请号：US18006259

申请日：2021-09-16

Applicant: Applied Materials, Inc.

Inventor： Chi-Ming TSAI ,  Thomas L. LAIDIG ,  Douglas Joseph VAN DEN BROEKE ,  Jang Fung CHEN

IPC: G03F7/20

CPC classification number: G03F7/2057 ,  G03F7/70508 ,  G03F7/70291 ,  G03F7/70441

Abstract: Embodiments described herein relate to methods of printing features within a lithography environment. The methods include determining a mask pattern. The mask pattern includes auxiliary features to be provided with main features to a maskless lithography device in a lithography process. The auxiliary features are determined with a rule-based process flow or a lithography model process flow.

公开(公告)号：US20230152684A1

公开(公告)日：2023-05-18

申请号：US17989128

申请日：2022-11-17

Applicant: Applied Materials, Inc.

Inventor： Douglas Joseph VAN DEN BROEKE ,  Chi-Ming TSAI

IPC: G03F1/70

CPC classification number: G03F1/70

Abstract: A system, methods, and a non-transitory computer-readable medium for digital lithography to reduce mura in substrate sections. The boundary lines of the digital lithography need to be invisible. In one example, a system includes a processing unit configured to print a virtual mask file provided by a controller. The controller is configured to receive data and convert the data into a virtual mask file having an exposure pattern for a lithographic process. The exposure pattern includes a plurality of first sections, and second sections. Each first section forms a boundary with each second section along a first column of image projection systems of the processing unit. The controller patterns the substrate. The exposure pattern includes a first section pattern of each first section that crosses the eye to eye boundary with the second section making the boundary invisible.

公开(公告)号：US20250155797A1

公开(公告)日：2025-05-15

申请号：US18715317

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： Chi-Ming TSAI ,  Thomas L. LAIDIG

IPC: G03F7/00 ,  G03F7/16

Abstract: Embodiments described herein provide for a system, a software application, and a method of a lithography process to form a three-dimensional profile in a single exposure operation. An image projections system of a lithography system will provide a plurality of shots to a photoresist layer. To form a three-dimensional profile in the photoresist layer, a local shot density of a plurality of shots within an exposure area will be varied. The local shot density will determine a dose provided by the image projection system at each sub-grid of an exposure area. The dose will determine the thickness of a photoresist layer when the plurality of shots are projected to the photoresist layer.

公开(公告)号：US20240231239A9

公开(公告)日：2024-07-11

申请号：US18048748

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： YingChiao WANG ,  Chi-Ming TSAI ,  Chun-chih CHUANG ,  Yung Peng HU

IPC: G03F7/20 ,  G02B26/08

CPC classification number: G03F7/70191 ,  G02B26/0833

Abstract: Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. In one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. The plurality of shots exposes the photoresist layer to an intensity of light emitted from the image projection system. The local transmittance rate of the plurality of shots within an exposure area is varied to form varying step heights in the exposure area of the photoresist layer.

公开(公告)号：US20250028251A1

公开(公告)日：2025-01-23

申请号：US18714792

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Thomas L. LAIDIG ,  Chi-Ming TSAI

IPC: G03F7/00 ,  G03F7/20

Abstract: A method is provided including directing a plurality of beams of radiation at a first area of a first layer on a substrate, each beam incident upon a different portion of a plurality of portions within the first area. Each portion has an area of a first size, the plurality of beams of radiation are directed at the first area based on a first pattern, the first pattern comprises a plurality of unit cells that include a plurality of on cells and a plurality of off cells, each unit cell has an area smaller than the first size, the plurality of on cells identify locations within the first area at which a beam of radiation of the plurality of beams of radiation is centrally focused, and the plurality of off cells identify locations within the first area at which no beam of radiation of the plurality of beams of radiation is centrally focused.

公开(公告)号：US20240134287A1

公开(公告)日：2024-04-25

申请号：US18048748

申请日：2022-10-20

Applicant: Applied Materials, Inc.

Inventor： YingChiao WANG ,  Chi-Ming TSAI ,  Chun-chih CHUANG ,  Yung Peng HU

IPC: G03F7/20 ,  G02B26/08

CPC classification number: G03F7/70191 ,  G02B26/0833

Abstract: Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a method, a system, and a software application for a lithography process to control transmittance rate of write beams and write gray tone patterns in a single exposure operation. In one embodiment, a plurality of shots are provided by an image projection system in a lithography system to a photoresist layer. The plurality of shots exposes the photoresist layer to an intensity of light emitted from the image projection system. The local transmittance rate of the plurality of shots within an exposure area is varied to form varying step heights in the exposure area of the photoresist layer.

公开(公告)号：US20230288812A1

公开(公告)日：2023-09-14

申请号：US18006249

申请日：2021-09-09

Applicant: Applied Materials, Inc.

Inventor： Chi-Ming TSAI

IPC: G03F7/20

CPC classification number: G03F7/2051 ,  G03F7/70508 ,  G03F7/70466 ,  G03F7/70725

Abstract: Embodiments described herein relate to methods of printing double exposure patterns in a lithography environment. The methods include determining a second exposure pattern to be exposed with a first exposure pattern in a lithography process. The second exposure pattern is determined with a rule-based process flow or a lithography model process flow.