公开(公告)号：US09368370B2

公开(公告)日：2016-06-14

申请号：US14642340

申请日：2015-03-09

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Qingjun Zhou ,  Srinivas D. Nemani ,  Andrew Nguyen

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/263 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01L21/263

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract translation: 提供了一种用于蚀刻设置在基板上的电介质层的方法。 该方法包括在蚀刻处理室中从静电卡盘取下基板，并在基板从静电卡盘脱卡的同时循环蚀刻电介质层。 循环蚀刻包括在提供到蚀刻处理室中的蚀刻气体混合物中远程产生等离子体，以在第一温度下蚀刻设置在基板上的电介质层。 蚀刻介电层产生蚀刻副产物。 循环蚀刻还包括将衬底垂直移动到蚀刻处理室中的气体分配板，并且使升华气体从气体分配板朝向衬底流动以升华蚀刻副产物。 升华在第二温度下进行，其中第二温度大于第一温度。

公开(公告)号：US09601301B2

公开(公告)日：2017-03-21

申请号：US14283159

申请日：2014-05-20

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Andrew Nguyen ,  Michael G. Chafin

IPC: H01J37/32 ,  H01J37/00 ,  H01L21/683

CPC classification number: H01J37/00 ,  H01J37/32715 ,  H01J37/32935 ,  H01L21/6833

Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

公开(公告)号：US08748322B1

公开(公告)日：2014-06-10

申请号：US13942950

申请日：2013-07-16

Applicant: Applied Materials, Inc.

Inventor： Nancy Fung ,  David T. Or ,  Qingjun Zhou ,  Lina Zhu ,  Jeremiah T. Pender ,  Srinivas D. Nemani ,  Sean S. Kang ,  Sergey G. Belostotskiy ,  Chinh Dinh

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/67028 ,  H01L21/76229

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates across a varying pattern on a patterned substrate. The method also provides a more rectilinear profile following the etch process. Methods include a sequential exposure of gapfill silicon oxide. The gapfill silicon oxide is exposed to a local plasma treatment prior to a remote-plasma dry etch which may produce salt by-product on the surface. The local plasma treatment has been found to condition the gapfill silicon oxide such that the etch process proceeds at a more even rate within each trench and across multiple trenches. The salt by-product may be removed by raising the temperature in a subsequent sublimation step.

Abstract translation: 描述了从沟槽中蚀刻二氧化硅的方法，其允许跨越图案化衬底上的变化图案的更均匀的蚀刻速率。 该方法还提供了在蚀刻工艺之后的更直线的轮廓。 方法包括间隙填充氧化硅的顺序曝光。 在远程等离子体干蚀刻之前，将间隙填充氧化硅暴露于局部等离子体处理，其可以在表面上产生副产物盐。 已经发现局部等离子体处理可以调节填隙氧化硅的间隙，使得蚀刻过程在每个沟槽内并跨越多个沟槽以更均匀的速率进行。 可以通过在随后的升华步骤中升高温度来除去盐副产物。