公开(公告)号：US08895449B1

公开(公告)日：2014-11-25

申请号：US13966453

申请日：2013-08-14

Applicant: Applied Materials, Inc.

Inventor： Lina Zhu ,  Sean S. Kang ,  Srinivas D. Nemani ,  Chia-Ling Kao

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3105 ,  H01L21/02063 ,  H01L21/31116

Abstract: A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant.

Abstract translation: 描述了从覆盖低k电介质材料中选择性除去碳氟化合物层的方法。 这些保护等离子体处理（PPT）是传统的蚀刻后处理（PET）的精巧替代品。 该方法包括连续暴露于（1）由硅 - 氟前体形成的局部等离子体，随后（2）暴露于在含氟前体的远程等离子体中形成的等离子体流出物。 已经发现远程等离子体蚀刻（2）对于局部等离子体硅 - 氟暴露后的残余材料是高度选择性的。 顺序方法（1） - （2）避免了将低k电介质材料暴露于氧气，这将不利地增加其介电常数。

公开(公告)号：US20150287612A1

公开(公告)日：2015-10-08

申请号：US14247035

申请日：2014-04-07

Applicant: Applied Materials, Inc.

Inventor： Olivier Luere ,  Sean S. Kang ,  Srinivas D. Nemani

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32139

Abstract: Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.

Abstract translation: 本发明的实施例涉及形成更多对称间隔物的方法，其可用于自对准多图案化工艺。 在使用高分辨率光掩模的光刻系统的光学分辨率附近形成的心轴上形成间隔物材料的保形间隔层。 在保形间隔层上进一步形成含碳层。 各向异性蚀刻含碳层以暴露保形间隔层的高点，同时保留碳侧面板。 然后可以蚀刻保形间隔层以形成间隔物，而不会使轮廓朝向一侧或另一侧的传统倾斜。

公开(公告)号：US08992792B2

公开(公告)日：2015-03-31

申请号：US13724698

申请日：2012-12-21

Applicant: Applied Materials, Inc.

Inventor： Chih-Yang Chang ,  Sean S. Kang ,  Chia-Ling Kao ,  Nikolaos Bekiaris

IPC: C03C15/00 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814

Abstract: Methods of fabricating ultra low-k dielectric self-aligned vias are described. In an example, a method of forming a self-aligned via (SAV) in a low-k dielectric film includes forming a trench pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. A via pattern is formed in a masking layer formed above the metal nitride hardmask layer. The via pattern is etched at least partially into the low-k dielectric film, the etching comprising using a plasma etch using a chemistry based on CF4, H2, and a diluent inert gas composition.

Abstract translation: 描述了制造超低k电介质自对准通孔的方法。 在一个示例中，在低k电介质膜中形成自对准通孔（SAV）的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成沟槽图案。 在形成在金属氮化物硬掩模层之上的掩模层中形成通孔图案。 通孔图案至少部分地被蚀刻到低k电介质膜中，蚀刻包括使用基于CF4，H2和稀释惰性气体组成的化学物质进行等离子体蚀刻。

公开(公告)号：US08748322B1

公开(公告)日：2014-06-10

申请号：US13942950

申请日：2013-07-16

Applicant: Applied Materials, Inc.

Inventor： Nancy Fung ,  David T. Or ,  Qingjun Zhou ,  Lina Zhu ,  Jeremiah T. Pender ,  Srinivas D. Nemani ,  Sean S. Kang ,  Sergey G. Belostotskiy ,  Chinh Dinh

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/67028 ,  H01L21/76229

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates across a varying pattern on a patterned substrate. The method also provides a more rectilinear profile following the etch process. Methods include a sequential exposure of gapfill silicon oxide. The gapfill silicon oxide is exposed to a local plasma treatment prior to a remote-plasma dry etch which may produce salt by-product on the surface. The local plasma treatment has been found to condition the gapfill silicon oxide such that the etch process proceeds at a more even rate within each trench and across multiple trenches. The salt by-product may be removed by raising the temperature in a subsequent sublimation step.

Abstract translation: 描述了从沟槽中蚀刻二氧化硅的方法，其允许跨越图案化衬底上的变化图案的更均匀的蚀刻速率。 该方法还提供了在蚀刻工艺之后的更直线的轮廓。 方法包括间隙填充氧化硅的顺序曝光。 在远程等离子体干蚀刻之前，将间隙填充氧化硅暴露于局部等离子体处理，其可以在表面上产生副产物盐。 已经发现局部等离子体处理可以调节填隙氧化硅的间隙，使得蚀刻过程在每个沟槽内并跨越多个沟槽以更均匀的速率进行。 可以通过在随后的升华步骤中升高温度来除去盐副产物。

公开(公告)号：US20200312680A1

公开(公告)日：2020-10-01

申请号：US16370783

申请日：2019-03-29

Applicant: Applied Materials Inc.

Inventor： DAISUKE SHIMIZU ,  Taiki Hatakeyama ,  Sean S. Kang ,  Chunlei Zhang ,  Sergio F. Shoji

IPC: H01L21/67 ,  F16K11/048 ,  F16K37/00

Abstract: Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

公开(公告)号：US10593518B1

公开(公告)日：2020-03-17

申请号：US16270803

申请日：2019-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Daisuke Shimizu ,  Taiki Hatakeyama ,  Sean S. Kang ,  Katsumasa Kawasaki ,  Chunlei Zhang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US08980758B1

公开(公告)日：2015-03-17

申请号：US14029769

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang Ling ,  Sean S. Kang ,  Jeremiah T. P. Pender ,  Srinivas D. Nemani ,  Bradley Howard

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Abstract translation: 提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。 在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺 在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。

公开(公告)号：US20140342569A1

公开(公告)日：2014-11-20

申请号：US13970481

申请日：2013-08-19

Applicant: Applied Materials, Inc.

Inventor： Lina Zhu ,  Sean S. Kang ,  Srinivas D. Nemani ,  Sergey G. Belostotskiy ,  Jeremiah T. Pender

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32137

Abstract: A method of selectively dry etching exposed substrate material on patterned heterogeneous structures is described. The method includes a plasma process prior to a remote plasma etch. The plasma process may use a biased plasma to treat an untreated substrate portion in a preferred direction to form a treated substrate portion. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the treated substrate portion using the plasma effluents. By implementing biased plasma processes, the normally isotropic etch may be transformed into a directional (anisotropic) etch despite the remote nature of the plasma excitation during the etch process.

Abstract translation: 描述了在图案化的异质结构上选择性地干蚀刻曝光的衬底材料的方法。 该方法包括在远程等离子体蚀刻之前的等离子体处理。 等离子体处理可以使用偏置的等离子体来处理优选方向上未处理的基板部分以形成经处理的基板部分。 随后，使用含氟前体形成远程等离子体，以使用等离子体流出物来蚀刻经处理的基底部分。 通过实施偏压等离子体处理，尽管在蚀刻过程中等离子体激发的远端性质，但是通常的各向同性蚀刻可以转化为定向（各向异性）蚀刻。

公开(公告)号：US20140342532A1

公开(公告)日：2014-11-20

申请号：US13966453

申请日：2013-08-14

Applicant: Applied Materials, Inc.

Inventor： Lina Zhu ,  Sean S. Kang ,  Srinivas D. Nemani ,  Chia-Ling Kao

IPC: H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3105 ,  H01L21/02063 ,  H01L21/31116

Abstract: A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant.

Abstract translation: 描述了从覆盖低k电介质材料中选择性除去碳氟化合物层的方法。 这些保护等离子体处理（PPT）是传统的蚀刻后处理（PET）的精巧替代品。 该方法包括连续暴露于（1）由硅 - 氟前体形成的局部等离子体，随后（2）暴露于在含氟前体的远程等离子体中形成的等离子体流出物。 已经发现远程等离子体蚀刻（2）对于局部等离子体硅 - 氟暴露后的残余材料是高度选择性的。 顺序方法（1） - （2）避免了将低k电介质材料暴露于氧气，这将不利地增加其介电常数。

公开(公告)号：US12198951B2

公开(公告)日：2025-01-14

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Adib Khan ,  Venkata Ravishankar Kasibhotla ,  Sultan Malik ,  Sean S. Kang ,  Keith Tatseun Wong

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/687 ,  H01L21/768

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.