MONITORING THICKNESS IN FACE-UP POLISHING
    3.
    发明公开

    公开(公告)号:US20240017371A1

    公开(公告)日:2024-01-18

    申请号:US18352432

    申请日:2023-07-14

    CPC classification number: B24B37/013

    Abstract: A chemical mechanical polishing system includes a support configured to hold a substrate face-up, a polishing article having a polishing surface smaller than an exposed surface of the substrate, a port for dispensing a polishing liquid, one or more actuators to bring the polishing surface into contact with a first portion of the exposed surface of the substrate and to generate relative motion between the substrate and the polishing pad and optically transmissive polymer window, an in-situ optical monitoring system, and a controller configured to receive a signal from the optical in-situ monitoring system and to modifying a polishing parameter based on the signal. The optical monitoring system includes a light source and a detector, the in-situ optical monitoring system configured to direct a light beam from above the support to impinge a non-overlapping second portion of the exposed surface of the substrate.

    Hydrogen plasma based cleaning process for etch hardware

    公开(公告)号:US10026597B2

    公开(公告)日:2018-07-17

    申请号:US15397429

    申请日:2017-01-03

    Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

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