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    METHODS AND APPARATUS FOR POST-CHEMICAL MECHANICAL PLANARIZATION SUBSTRATE CLEANING
    1.
    发明申请
    METHODS AND APPARATUS FOR POST-CHEMICAL MECHANICAL PLANARIZATION SUBSTRATE CLEANING 有权
    后期化学机械平面化基板清洗方法与装置

    公开(公告)号：US20140209239A1

    公开(公告)日：2014-07-31

    申请号：US14167818

    申请日：2014-01-29

    Applicant: Applied Materials, Inc.

    Inventor： Sen-Hou Ko ,  Lakshmanan Karuppiah

    IPC: H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/67046 ,  B08B1/008 ,  B08B1/04 ,  B24B37/107 ,  B24B37/34 ,  H01L21/02041 ,  H01L21/02087 ,  H01L21/02096 ,  H01L21/304 ,  H01L21/463 ,  H01L21/67051 ,  H01L21/67219 ,  H01L21/6838

    Abstract: A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the first pad holder rotatable on a second axis disposed parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the second pad holder rotatable on a third axis parallel to the first axis and the second axis.

    Abstract translation: 提供了一种用于在化学机械平面化（CMP）之后清洁衬底的方法和设备。 该装置包括壳体，可在第一轴线上旋转并被构造成将基底保持在基本垂直取向的衬底保持器，第一衬垫保持器具有以平行和间隔的关系面向衬底保持器的衬垫保持表面，第一衬垫 支架可在平行于第一轴线设置的第二轴线上旋转，第一致动器可操作以相对于衬底支架移动衬垫支架以改变第一轴线与第二轴线之间的距离，以及设置在壳体中的第二垫座， 所述第二焊盘保持器具有以平行和间隔的关系面对所述衬底保持器的焊盘保持表面，所述第二焊盘保持器可在平行于所述第一轴线和所述第二轴线的第三轴线上旋转。

    CRYOGENIC LIQUID CLEANING APPARATUS AND METHODS
    4.
    发明申请
    CRYOGENIC LIQUID CLEANING APPARATUS AND METHODS 审中-公开
    低温液体清洗装置及方法

    公开(公告)号：US20140196749A1

    公开(公告)日：2014-07-17

    申请号：US14146382

    申请日：2014-01-02

    Applicant: Applied Materials, Inc.

    Inventor： Jianshe Tang ,  Sidney P. Huey ,  Lakshmanan Karuppiah

    IPC: H01L21/67 ,  H01L21/02

    CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/02074 ,  H01L21/02096

    Abstract: A cryogenic cleaning apparatus is disclosed. The cryogenic cleaning apparatus has a source of cryogen, a nozzle coupled to the source of cryogen, the nozzle including a main passage adapted to receive the cryogen, one or more auxiliary gas inlets adapted to supply an auxiliary gas to mix with the cryogen either within the nozzle or at a nozzle exit of the nozzle to produce cryogen droplets, and a heated holder adapted to receive a substrate to be cleaned. Cryogenic cleaning methods adapted to clean substrates are provided, as are numerous other aspects.

    Abstract translation: 公开了一种低温清洁装置。 低温清洁装置具有致冷剂源，连接到冷冻剂源的喷嘴，喷嘴包括适于接收冷冻剂的主通道，一个或多个辅助气体入口适于供应辅助气体以与冷冻剂混合， 喷嘴或在喷嘴的喷嘴出口处产生低温液滴，以及适于接收待清洁的基底的加热保持器。 提供了适于清洁基底的低温清洁方法，以及许多其它方面。

    SEMICONDUCTOR DEVICE PROCESSING TOOLS AND METHODS FOR PATTERNING SUBSTRATES
    5.
    发明申请
    SEMICONDUCTOR DEVICE PROCESSING TOOLS AND METHODS FOR PATTERNING SUBSTRATES 有权
    半导体器件加工工具和方法用于绘制衬底

    公开(公告)号：US20140154887A1

    公开(公告)日：2014-06-05

    申请号：US14093503

    申请日：2013-12-01

    Applicant: Applied Materials, Inc.

    Inventor： Mayur Trivedi ,  Sushil Padiyar ,  Lakshmanan Karuppiah ,  Randhir Thakur

    IPC: H01L21/308 ,  H01L21/67

    CPC classification number: H01L21/3088 ,  H01L21/3086 ,  H01L21/67184 ,  H01L21/67207

    Abstract: In some embodiments, an electronic device processing system is provided that includes a processing tool having a first subsystem configured to carry out a first subset of processes on a substrate having pattern features, the first subsystem including a first conformal deposition chamber and a first etch chamber. The processing tool includes a second subsystem coupled to the first subsystem and configured to carry out a second subset of processes on the substrate, the second subsystem including a second conformal deposition chamber and a second etch chamber. The processing tool is configured to employ the first and second subsystems to perform pitch division on the substrate within the processing tool so as to form a reduced-pitch pattern on the substrate. Numerous other embodiments are provided.

    Abstract translation: 在一些实施例中，提供一种电子设备处理系统，其包括具有第一子系统的处理工具，第一子系统被配置为在具有图案特征的基板上执行第一子进程，第一子系统包括第一共形沉积室和第一蚀刻室 。 所述处理工具包括耦合到所述第一子系统并被配置为在所述衬底上执行第二子进程的第二子系统，所述第二子系统包括第二共形沉积室和第二蚀刻室。 处理工具被配置为使用第一和第二子系统在处理工具内的基板上执行螺距分割，以便在基板上形成减小的间距图案。 提供了许多其他实施例。

    Feedback control using detection of clearance and adjustment for uniform topography
    7.
    发明授权
    Feedback control using detection of clearance and adjustment for uniform topography 有权
    反馈控制使用检测间隙和调整均匀的地形

    公开(公告)号：US09472475B2

    公开(公告)日：2016-10-18

    申请号：US13774843

    申请日：2013-02-22

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    IPC: H01L21/66 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12

    CPC classification number: H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

    Abstract: A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

    Abstract translation: 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。

    Spectrographic monitoring of a substrate during processing using index values
    8.
    发明授权
    Spectrographic monitoring of a substrate during processing using index values 有权
    使用指标值对处理过程中的基板进行光谱监测

    公开(公告)号：US08874250B2

    公开(公告)日：2014-10-28

    申请号：US14046237

    申请日：2013-10-04

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey Drue David ,  Dominic J. Benvegnu ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Lakshmanan Karuppiah

    IPC: G06F19/00 ,  B24B49/00 ,  G01B11/28 ,  B24B49/12 ,  G05B15/02 ,  B24B37/013

    CPC classification number: G05B15/02 ,  B24B37/013 ,  B24B49/12

    Abstract: Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

    Abstract translation: 描述了在化学机械抛光期间用于光谱监测基底的方法，系统和装置。 一方面，计算机实现的方法包括存储具有多个参考光谱的库，多个参考光谱的每个参考光谱具有存储的相关联的索引值，在抛光期间原位测量光谱序列以获得测量的光谱 ，对于光谱序列的每个测量光谱，找到最佳匹配参考光谱以产生最佳匹配参考光谱序列，从最佳匹配参考光谱序列确定每个最佳匹配光谱的相关索引值，以产生序列 索引值，将线性函数拟合到索引值序列，以及当线性函数匹配或超过目标索引时或者当来自确定步骤的相关索引值匹配或超过目标索引时停止抛光。

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