DETERMINING SUBSTRATE PRECESSION WITH ACOUSTIC SIGNALS

    公开(公告)号:US20230390885A1

    公开(公告)日:2023-12-07

    申请号:US17963143

    申请日:2022-10-10

    IPC分类号: B24B37/005 G01H11/08

    CPC分类号: B24B37/005 G01H11/08

    摘要: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic sensor that receives acoustic signals from the surface of the substrate, and a controller configured to determine an angular orientation of the substrate based on received acoustic signals from the in-situ acoustic monitoring system.

    MONITOR CHEMICAL MECHANICAL POLISHING PROCESS USING MACHINE LEARNING BASED PROCESSING OF HEAT IMAGES

    公开(公告)号:US20220347813A1

    公开(公告)日:2022-11-03

    申请号:US17730811

    申请日:2022-04-27

    IPC分类号: B24B37/005

    摘要: A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, a temperature monitoring system including a non-contact thermal imaging camera positioned above the platen to have a field of view of a portion of the polishing pad on the platen, and a controller. The controller is configured to receive the thermal image from the temperature monitoring system, input the thermal image into a machine learning model trained by training examples to determine an indication for one or more of 1) a presence of a process excursion, 2) a substrate state, or 3) a diagnosis for the process excursion, and receive from the machine learning model the indication.

    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION

    公开(公告)号:US20220283554A1

    公开(公告)日:2022-09-08

    申请号:US17681673

    申请日:2022-02-25

    摘要: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.