公开(公告)号：US11959169B2

公开(公告)日：2024-04-16

申请号：US17958282

申请日：2022-09-30

申请人： Applied Materials, Inc.

发明人： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

CPC分类号： C23C16/45517 ,  C23C16/40 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/67017

摘要： A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20200240014A1

公开(公告)日：2020-07-30

申请号：US16776204

申请日：2020-01-29

申请人： Applied Materials, Inc

发明人： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

摘要： A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11322347B2

公开(公告)日：2022-05-03

申请号：US16660646

申请日：2019-10-22

申请人： Applied Materials, Inc.

发明人： Johanes F. Swenberg ,  Taewan Kim ,  Christopher S. Olsen ,  Erika Hansen

IPC分类号： H01L21/02 ,  H01L27/11521 ,  H01L21/28 ,  H01L27/11568

摘要： Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

公开(公告)号：US11486038B2

公开(公告)日：2022-11-01

申请号：US16776204

申请日：2020-01-29

申请人： Applied Materials, Inc.

发明人： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC分类号： C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/458 ,  C23C16/40

摘要： A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11081340B2

公开(公告)日：2021-08-03

申请号：US16849713

申请日：2020-04-15

申请人： Applied Materials, Inc.

发明人： Hansel Lo ,  Christopher S. Olsen ,  Eric Kihara Shono ,  Johanes S. Swenberg ,  Erika Hansen ,  Taewan Kim ,  Lara Hawrylchak

IPC分类号： H01L27/11582 ,  H01L21/02 ,  H01J37/32 ,  H01L21/311

摘要： Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.