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26 条记录 (耗时 0.015 秒)

    Remote plasma oxidation chamber
    7.
    发明授权
    Remote plasma oxidation chamber 有权

    公开(公告)号：US11615944B2

    公开(公告)日：2023-03-28

    申请号：US15937076

    申请日：2018-03-27

    申请人： Applied Materials, Inc.

    发明人： Christopher S. Olsen ,  Eric Kihara Shono ,  Lara Hawrylchak ,  Agus Sofian Tjandra ,  Chaitanya A. Prasad ,  Sairaju Tallavarjula

    IPC分类号： H01J37/32 ,  C23C16/455 ,  C30B25/14 ,  H01L21/67

    摘要： Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

    Half-angle nozzle
    8.
    发明授权
    Half-angle nozzle 有权

    公开(公告)号：US10752991B2

    公开(公告)日：2020-08-25

    申请号：US15877048

    申请日：2018-01-22

    申请人： Applied Materials, Inc.

    发明人： Eric Kihara Shono

    IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C30B25/14

    摘要： Implementations of the present disclosure provide an apparatus for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for thermal processing a substrate. The apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas towards the edge of the substrate advantageously controls growth uniformity throughout the substrate, i.e., from the center to the edge. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.