公开(公告)号：US12139790B2

公开(公告)日：2024-11-12

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Christopher Olsen ,  Rene George ,  Eric Shono ,  Lara Hawrylchak ,  Erika Hansen ,  Tobin Kaufman-Osborn ,  Hansel Lo ,  Kartik Shah

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

公开(公告)号：US11978646B2

公开(公告)日：2024-05-07

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming Iu ,  Kartik Shah ,  Norman L. Tam ,  Matthew Spuller ,  Jau-Jiun Chen ,  Kong Lung Samuel Chan ,  Elizabeth Neville ,  Preetham Rao ,  Abhilash J. Mayur ,  Gia Pham

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  H01L21/687

CPC classification number: H01L21/67103 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/56 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68792 ,  H01L21/67098

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US11549183B2

公开(公告)日：2023-01-10

申请号：US16876252

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Yanjun Xia

IPC: C23C16/455 ,  H01J37/32

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

公开(公告)号：US20220327262A1

公开(公告)日：2022-10-13

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US20220312553A1

公开(公告)日：2022-09-29

申请号：US17214340

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Amit Rajendra Sherekar ,  Kartik Shah ,  Ashutosh Agarwal ,  Eric J. Hoffmann ,  Sanjeev Baluja ,  Vijay D. Parkhe

IPC: H05B1/02

Abstract: A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

公开(公告)号：US20220122865A1

公开(公告)日：2022-04-21

申请号：US17075321

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Santhanam ,  Kartik Shah ,  Wolfgang Aderhold ,  Martin Hilkene ,  Stephen Moffatt

IPC: H01L21/67 ,  G06N20/00 ,  G05B19/406

Abstract: Embodiments disclosed herein include a processing tool for semiconductor processing. In an embodiment, the processing tool comprises a chamber, and a plurality of witness sensors integrated with the chamber. In an embodiment, the processing tool further comprises a drift detection module. In an embodiment, data from the plurality of witness sensors is provided to the drift detection module as input data. In an embodiment, the processing tool further comprises a dashboard for displaying output data from the drift detection module.

公开(公告)号：US11239058B2

公开(公告)日：2022-02-01

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan Balaraman ,  Balamurugan Ramasamy ,  Kartik Shah ,  Mats Larsson ,  Kevin A. Papke ,  Rajasekhar Patibandla ,  Sathyanarayana Bindiganavale ,  Umesh M. Kelkar

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：US11021794B2

公开(公告)日：2021-06-01

申请号：US16011383

申请日：2018-06-18

Applicant: Applied Materials, Inc.

Inventor： Preetham Rao ,  Subramani Iyer ,  Kartik Shah ,  Mehran Behdjat

IPC: H05B3/68 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

公开(公告)号：US20200240014A1

公开(公告)日：2020-07-30

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.