公开(公告)号：US20150064921A1

公开(公告)日：2015-03-05

申请号：US14015557

申请日：2013-08-30

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. NEMANI ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Chia-Ling KAO ,  Sergey G. BELOSTOTSKIY ,  Lina ZHU

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3081 ,  H01L21/68742

Abstract: Methods for etching a material layer disposed on the substrate using a low temperature etching process along with a subsequent low temperature plasma annealing process are provided. In one embodiment, a method for etching a material layer disposed on a substrate includes transferring a substrate having a material layer disposed thereon into an etching processing chamber, supplying an etching gas mixture into the processing chamber, remotely generating a plasma in the etching gas mixture to etch the material layer disposed on the substrate, and plasma annealing the material layer at a substrate temperature less than 100 degrees Celsius.

Abstract translation: 提供了使用低温蚀刻工艺以及随后的低温等离子体退火工艺来蚀刻设置在基板上的材料层的方法。 在一个实施例中，用于蚀刻设置在基板上的材料层的方法包括将其上设置有材料层的基板转印到蚀刻处理室中，将蚀刻气体混合物供应到处理室中，在蚀刻气体混合物中远程产生等离子体 蚀刻设置在基板上的材料层，以及在低于100摄氏度的衬底温度下对材料层进行等离子体退火。

公开(公告)号：US20150079798A1

公开(公告)日：2015-03-19

申请号：US14029769

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/306

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Abstract translation: 提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。 在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺 在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。