公开(公告)号：US20240234133A1

公开(公告)日：2024-07-11

申请号：US18543996

申请日：2023-12-18

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC分类号： H01L21/02 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C23C28/04

CPC分类号： H01L21/02359 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/0209 ,  C23C16/405 ,  C23C16/45544 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02181

摘要： A method of forming a semiconductor structure includes performing a pre-treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post-treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.

公开(公告)号：US20240339318A1

公开(公告)日：2024-10-10

申请号：US18595374

申请日：2024-03-04

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC分类号： H01L21/02 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C28/04

CPC分类号： H01L21/02332 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/0234

摘要： A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-K dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-K dielectric layer and the second high-K dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-K dielectric layer and the second high-K dielectric layer.

公开(公告)号：US20210322934A1

公开(公告)日：2021-10-21

申请号：US17365791

申请日：2021-07-01

申请人： Applied Materials, Inc.

发明人： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes F. SWENBERG ,  Stephen MOFFATT

IPC分类号： B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00 ,  C23C16/455

摘要： Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.