公开(公告)号：US20230287568A1

公开(公告)日：2023-09-14

申请号：US17692351

申请日：2022-03-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Joseph Behnke ,  David Knapp

IPC: C23C16/455 ,  C23C18/32 ,  C23C14/16 ,  C23C18/16 ,  C23C14/58

CPC classification number: C23C16/45565 ,  C23C18/32 ,  C23C14/165 ,  C23C18/1689 ,  C23C14/5853

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O2, O3 at a temperature from about 25° C. to about 350° C.

公开(公告)号：US20240339349A1

公开(公告)日：2024-10-10

申请号：US18131534

申请日：2023-04-06

Applicant: Applied Materials, Inc.

Inventor： Joseph Sommers ,  Joseph Behnke ,  Alexander Sulyman ,  Jaeyong Cho

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/673

CPC classification number: H01L21/6833 ,  H01L21/67115 ,  H01L21/67323

Abstract: Embodiments disclosed herein include an electrostatic chuck (ESC). In an embodiment, the ESC comprises a substrate with a first surface, where the first surface has a first surface roughness. The ESC may further comprise a plurality of mesas extending up from the first surface. In an embodiment, the plurality of mesas each include a second surface, where the second surface has a second surface roughness. In an embodiment the first surface roughness and the second surface roughness both have an average surface roughness Ra of approximately 0.3 μm or lower.

公开(公告)号：US20240352589A1

公开(公告)日：2024-10-24

申请号：US18594802

申请日：2024-03-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Laksheswar Kalita ,  Joseph Behnke

IPC: C23C18/32 ,  C23C18/16 ,  H01J37/32

CPC classification number: C23C18/32 ,  C23C18/1637 ,  C23C18/1639 ,  C23C18/1689 ,  H01J37/32495

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by treating the chamber component with an oxidizing agent comprising hydrofluoric acid and/or nitric acid

公开(公告)号：US20240304423A1

公开(公告)日：2024-09-12

申请号：US18181077

申请日：2023-03-09

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Joseph Behnke ,  Ryan Pakulski ,  Christopher L. Beaudry ,  Jonathan Strahle

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/56

CPC classification number: H01J37/32495 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32816 ,  H01J2237/0453

Abstract: The present technology is generally directed to semiconductor processing systems and methods. Systems and methods include a chamber having a plurality of chamber components, such as a pedestal, a lid stack, a faceplate, electrode, and a showerhead. The faceplate is supported with the lid stack and defines a plurality of first apertures and the showerhead is positioned between the faceplate and the pedestal and defines a plurality of second apertures. In systems and methods, the faceplate, the showerhead, the lid stack, the pedestal, or a combination thereof include an yttrium fluoride, yttrium oxyfluoride, or both yttrium fluoroide and yttrium oxyfluoride coating having a thickness of greater than 10 μm on at least a portion of the respective chamber component or combination thereof.