公开(公告)号：US20250069926A1

公开(公告)日：2025-02-27

申请号：US18236554

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Arunkumar Ramachandraiah ,  Paul Reuter ,  Devendra Holeyannavar ,  Steven Trey Tindel ,  Dean Hruzek ,  Jeffrey Hudgens ,  Maureen Breiling ,  Venkatesh Chinnaplar Rajappa ,  Micah E. Klaeser ,  Benjamin Johnston ,  Alton Wang ,  Wei Siang Chao ,  Chandrakant Sapkale ,  Shiva Prasad Kota ,  Latha Ramesh

IPC: H01L21/677 ,  B25J11/00 ,  G03F7/00 ,  H01L21/67 ,  H01L21/687

Abstract: Integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. In some embodiments, for example, the integrated substrate processing system may include an EFEM and a processing tool enclosure that are coupled together to form an integrated processing environment. The integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (RAM), in order to do so. In some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the EFEM and/or processing tool enclosure.

公开(公告)号：US20250167027A1

公开(公告)日：2025-05-22

申请号：US18517791

申请日：2023-11-22

Applicant: Applied Materials, Inc.

Inventor： Srinivas Poshatrahalli Gopalakrishna ,  Shivaraj Nara Manjunath ,  Devendra Channappa Holeyannavar ,  Paul Reuter ,  Douglas Baumgarten ,  Sushant Koshti ,  Amit Kumar Biswas ,  Nithiyanantham Balasubramaniam ,  Latha Ramesh ,  Navya Talluri

IPC: H01L21/673 ,  G01N19/10 ,  G01N33/00 ,  G06F30/27 ,  H01L21/67

Abstract: A method for monitoring inside parameters of a substrate carrier. The method includes receiving a first substrate carrier, supplying a fluid, at a first flow rate, through an inlet of the first substrate carrier, and at least partially purging the fluid through an outlet of the first substrate carrier for a first period of time. The method further includes measuring, using a first sensor disposed at the outlet, a first value of a first property of an exhaust from the substrate carrier at the outlet of the first substrate carrier, and determining, based at least in part on the first value of the first property, a second value of the first property inside the first substrate carrier.