公开(公告)号：US20250069926A1

公开(公告)日：2025-02-27

申请号：US18236554

申请日：2023-08-22

Applicant: Applied Materials, Inc.

Inventor： Arunkumar Ramachandraiah ,  Paul Reuter ,  Devendra Holeyannavar ,  Steven Trey Tindel ,  Dean Hruzek ,  Jeffrey Hudgens ,  Maureen Breiling ,  Venkatesh Chinnaplar Rajappa ,  Micah E. Klaeser ,  Benjamin Johnston ,  Alton Wang ,  Wei Siang Chao ,  Chandrakant Sapkale ,  Shiva Prasad Kota ,  Latha Ramesh

IPC: H01L21/677 ,  B25J11/00 ,  G03F7/00 ,  H01L21/67 ,  H01L21/687

Abstract: Integrated substrate processing systems are disclosed that are able to achieve high-volume processing of substrates (e.g., greater than 120 substrates per hour) using environmentally sensitive processes and/or tools, such as photolithography processes and/or tools. In some embodiments, for example, the integrated substrate processing system may include an EFEM and a processing tool enclosure that are coupled together to form an integrated processing environment. The integrated substrate processing system may operate to maintain substantially uniform conditions (e.g., at a uniform temperature and relative humidity) throughout the integrated environment, and in some embodiments, may utilize an external air source, such as a remote air module (RAM), in order to do so. In some embodiments, high-volume processing of substrates may be further facilitated by employing specialized substrate handling robots and/or specially adapting the EFEM and/or processing tool enclosure.

公开(公告)号：US20240290644A1

公开(公告)日：2024-08-29

申请号：US18175344

申请日：2023-02-27

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Kaushik Alayavalli ,  Manish Hemkar ,  Jeffrey C. Hudgens ,  Maureen Breiling

IPC: H01L21/677 ,  H01L21/67

CPC classification number: H01L21/67742 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

Abstract: Exemplary semiconductor processing systems may include a first processing chamber and a second processing chamber. Each processing chamber may define a processing region and a transfer region having a slit valve. Each processing chamber may include a substrate support that is vertically translatable between the processing region and the transfer region. Each processing chamber may include a gas delivery assembly disposed above and in alignment with the substrate support. The first processing chamber and the second processing chamber may be at least substantially aligned along a first vertical axis. The systems may include a first transfer chamber coupled with the first processing chamber via the slit valve. The systems may include a second transfer chamber coupled with the second processing chamber via the slit valve. A transfer robot may be disposed within each transfer chamber. The transfer chambers may be at least substantially aligned along a second vertical axis.

公开(公告)号：US10665494B2

公开(公告)日：2020-05-26

申请号：US15885120

申请日：2018-01-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Niranjan Kumar ,  Seshadri Ramaswami ,  Shay Assaf ,  Amikam Sade ,  Andy Constant ,  Maureen Breiling

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/687

Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.