公开(公告)号：US09048183B2

公开(公告)日：2015-06-02

申请号：US14147291

申请日：2014-01-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC: H01L21/3205 ,  H01L21/28 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Abstract translation: 实施例提供了沉积含金属材料的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 提供了一种用于处理衬底的方法，其包括在电介质材料中形成形成特征定义的电介质材料，将功函数材料保形地沉积在特征定义的侧壁和底部上，以及在工作功能上沉积金属栅极填充材料 用于填充特征定义的材料，其中通过使至少一种具有式MXY的金属卤化物前体与其中M是钽，铪，钛和镧的金属卤化物前体反应沉积功函材料，X是选自氟 ，氯，溴或碘，y为3至5。

公开(公告)号：US08987080B2

公开(公告)日：2015-03-24

申请号：US13865285

申请日：2013-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  Seshadri Ganguli ,  Atif Noori ,  Maitreyee Mahajani ,  Shih Chung Chen ,  Yu Lei ,  Xinyu Fu ,  Wei Tang ,  Srinivas Gandikota

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/322 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/28088 ,  H01L21/3221 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Abstract translation: 提供了适用于FinFET结构的金属栅极的方法。 本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。 沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。 可以首先沉积PMOS或NMOS。