公开(公告)号：US12278110B2

公开(公告)日：2025-04-15

申请号：US17572397

申请日：2022-01-10

Applicant: Applied Materials, Inc.

Inventor： Sean Kang ,  Olivier Luere ,  Kenji Takeshita ,  Sanghyuk Choi ,  Mengnan Zou ,  Zihao Ding

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.

公开(公告)号：US11901484B2

公开(公告)日：2024-02-13

申请号：US17345992

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mengnan Zou ,  Mingwei Zhu ,  David Masayuki Ishikawa ,  Nag Patibandla

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

公开(公告)号：US20220399474A1

公开(公告)日：2022-12-15

申请号：US17345992

申请日：2021-06-11

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mengnan Zou ,  Mingwei Zhu ,  David Masayuki Ishikawa ,  Nag Patibandla

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.