公开(公告)号：US20150376788A1

公开(公告)日：2015-12-31

申请号：US14468665

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Oscar LOPEZ ,  Ningli LIU

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract translation: 本文公开的实施例通常包括用于基于基团的沉积电介质膜的装置。 该设备包括处理室，耦合到处理室的自由基源，设置在处理室中的基板支撑件和设置在自由基源和基板支撑件之间的双通道喷头。 双通道淋浴头包括多个管和围绕多个管的内部容积。 多个管和内部体积被嵌入在双通道喷头中的一个或多个环形通道包围。 双通道喷头还包括连接到一个或多个通道的第一入口和连接到内部容积的第二入口。 处理室可以是PECVD室，并且该装置能够执行循环过程（基于交替自由基的CVD和PECVD）。

公开(公告)号：US20180080125A1

公开(公告)日：2018-03-22

申请号：US15822551

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Oscar LOPEZ ,  Ningli LIU

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  C23C16/509

CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).