公开(公告)号：US20170068174A1

公开(公告)日：2017-03-09

申请号：US15357085

申请日：2016-11-21

申请人： Applied Materials, Inc.

发明人： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

IPC分类号： G03F7/20

CPC分类号： G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

摘要： A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

摘要翻译： 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

公开(公告)号：US20140268082A1

公开(公告)日：2014-09-18

申请号：US14139457

申请日：2013-12-23

申请人： Applied Materials, Inc.

发明人： Timothy Michaelson ,  Timothy W. Weidman ,  Barry Lee Chin ,  Majeed Foad ,  Paul Deaton

IPC分类号： G03F7/16 ,  G03F7/09

CPC分类号： G03F7/70716 ,  G03F7/09 ,  G03F7/167 ,  G03F7/2037

摘要： A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

摘要翻译： 光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基底上冷凝光致抗蚀剂。 沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。 需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

公开(公告)号：US20170131627A1

公开(公告)日：2017-05-11

申请号：US15405860

申请日：2017-01-13

申请人： Applied Materials, Inc.

发明人： Vinayak Vishwanath Hassan ,  Majeed Foad ,  Cara Beasley ,  Ralf Hofmann

IPC分类号： G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/38

CPC分类号： G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/22 ,  G03F1/38

摘要： An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.

公开(公告)号：US20160377972A1

公开(公告)日：2016-12-29

申请号：US15107054

申请日：2014-12-19

申请人： APPLIED MATERIALS, INC.

发明人： Ralf Hofmann ,  Majeed Foad ,  Cara Beasley

IPC分类号： G03F1/22 ,  C03C17/245

摘要： An extreme ultraviolet mask and method of manufacture thereof includes: providing a glass-ceramic block; forming a glass-ceramic substrate from the glass-ceramic block; and depositing a planarization layer on the glass-ceramic substrate.

摘要翻译： 一种极紫外线掩模及其制造方法包括：提供玻璃陶瓷块; 从玻璃陶瓷块形成玻璃陶瓷基板; 以及在所述玻璃 - 陶瓷衬底上沉积平坦化层。

公开(公告)号：US10788744B2

公开(公告)日：2020-09-29

申请号：US15400482

申请日：2017-01-06

申请人： Applied Materials, Inc.

发明人： Ralf Hofmann ,  Cara Beasley ,  Majeed Foad

IPC分类号： G03F7/16 ,  G03F1/22 ,  C23C14/50 ,  C23C16/458 ,  H01J37/32 ,  H01J37/34

摘要： A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

公开(公告)号：US20160341544A1

公开(公告)日：2016-11-24

申请号：US15107062

申请日：2014-12-19

申请人： APPLIED MATERIALS, INC.

发明人： Majeed Foad

IPC分类号： G01B11/06 ,  G01B15/02

CPC分类号： G01B11/0683 ,  G01B11/0625 ,  G01B15/02 ,  G03F1/84

摘要： A monitoring system and method of operation thereof includes: providing a substrate on a platform; performing a scan of the substrate; depositing a material layer on the substrate; monitoring a deposition thickness of the material layer; and generating an alert based on an error in the deposition thickness.

摘要翻译： 监视系统及其操作方法包括：在平台上提供基板; 对基片进行扫描; 在衬底上沉积材料层; 监测材料层的沉积厚度; 以及基于沉积厚度的误差产生警报。

公开(公告)号：US10209613B2

公开(公告)日：2019-02-19

申请号：US15167740

申请日：2016-05-27

申请人： Applied Materials, Inc.

发明人： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

IPC分类号： C23C16/00 ,  G03F1/24 ,  G03F7/20

摘要： An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

公开(公告)号：US10012897B2

公开(公告)日：2018-07-03

申请号：US15405860

申请日：2017-01-13

申请人： Applied Materials, Inc.

发明人： Vinayak Vishwanath Hassan ,  Majeed Foad ,  Cara Beasley ,  Ralf Hofmann

IPC分类号： G03F1/24 ,  G03F1/38 ,  C23C16/06 ,  C23C16/44

CPC分类号： G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/22 ,  G03F1/38

摘要： An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.

公开(公告)号：US20170115555A1

公开(公告)日：2017-04-27

申请号：US15400482

申请日：2017-01-06

申请人： Applied Materials, Inc.

发明人： Ralf Hofmann ,  Cara Beasley ,  Majeed Foad

IPC分类号： G03F1/22 ,  C23C16/458 ,  G03F7/16 ,  C23C14/50

摘要： A processing system includes: a vacuum chamber; a plurality of processing sub-systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

公开(公告)号：US20160274454A1

公开(公告)日：2016-09-22

申请号：US15167740

申请日：2016-05-27

申请人： Applied Materials, Inc.

发明人： Cara Beasley ,  Ralf Hofmann ,  Majeed Foad ,  Timothy Michaelson

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  G03F7/70958

摘要： An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.

摘要翻译： 集成的极紫外（EUV）空白生产系统包括：用于将基板放置在真空中的真空室; 第一沉积系统，用于沉积在衬底上具有平坦化顶表面的平坦化层; 以及用于在平坦化层上沉积多层堆叠而不从真空中移除基板的第二沉积系统。 EUV空白在EUV光刻系统中包括：极紫外光源; 一个用于指示EUV来源的光的镜子; 用于放置具有平坦化层的EUV掩模空白的掩模版台; 以及用于放置晶片的晶片台。 EUV空白包括：底物; 平坦化层，用于补偿与衬底的表面相关的缺陷，平坦化层具有平坦的顶表面; 以及平坦化层上的多层堆叠。