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公开(公告)号:US11813712B2
公开(公告)日:2023-11-14
申请号:US17036623
申请日:2020-09-29
Applicant: Applied Materials, Inc.
Inventor: Aniruddh Jagdish Khanna , Jason G. Fung , Puneet Narendra Jawali , Rajeev Bajaj , Adam Wade Manzonie , Nandan Baradanahalli Kenchappa , Veera Raghava Reddy Kakireddy , Joonho An , Jaeseok Kim , Mayu Yamamura
CPC classification number: B24B37/20 , B24B37/042
Abstract: Polishing pads having discrete and selectively arranged regions of varying porosity within a continuous phase of polymer material are provided herein. In one embodiment a polishing pad features a plurality of polishing elements each comprising a polishing surface and sidewalls extending downwardly from the polishing surface to define a plurality of channels disposed between the polishing elements, wherein one or more of the polishing elements is formed of a continuous phase of polymer material having one or more first regions comprising a first porosity and a second region comprising a second porosity, wherein the second porosity is less than the first porosity.
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公开(公告)号:US11806829B2
公开(公告)日:2023-11-07
申请号:US16906992
申请日:2020-06-19
Applicant: Applied Materials, Inc.
Inventor: Puneet Narendra Jawali , Nandan Baradanahalli Kenchappa , Jason G. Fung , Shiyan Akalanka Jayanath Wewala Gonnagahadeniyage , Rajeev Bajaj , Adam Wade Manzonie , Andrew Scott Lawing
Abstract: Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.
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公开(公告)号:US11951590B2
公开(公告)日:2024-04-09
申请号:US17346399
申请日:2021-06-14
Applicant: Applied Materials, Inc.
Inventor: Shiyan Akalanka Jayanath Wewala Gonnagahadeniyage , Ashwin Chockalingam , Jason Garcheung Fung , Veera Raghava Reddy Kakireddy , Nandan Baradanahalli Kenchappa , Puneet Narendra Jawali , Rajeev Bajaj
IPC: B24B37/26
CPC classification number: B24B37/26
Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A polishing pad includes a plurality of polishing elements and a plurality of grooves disposed between the polishing elements. Each polishing element includes a plurality of individual posts. Each post includes an individual surface that forms a portion of a polishing surface of the polishing pad and one or more sidewalls extending downwardly from the individual surface. The sidewalls of the plurality of individual posts define a plurality of pores disposed between the posts.
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公开(公告)号:US11878389B2
公开(公告)日:2024-01-23
申请号:US17172152
申请日:2021-02-10
Applicant: Applied Materials, Inc.
IPC: B24B37/24 , B33Y80/00 , B23K26/342
CPC classification number: B24B37/24 , B23K26/342 , B33Y80/00
Abstract: Embodiments of the present disclosure generally relate to structures formed using an additive manufacturing process, and more particularly, to polishing pads, and methods for manufacturing polishing pads, which may be used in a chemical mechanical polishing (CMP) process. The structures described herein are formed from a plurality of printed layers. The structure comprises a first material domain having a first material composition and a plurality of second material domains having a second material composition different from the first material composition. The first material domain is configured to have a first rate of removal and the plurality of second material domains are configured to have a different second rate of removal when an equivalent force is applied to a top surface of the first material domain and the plurality of second material domains.
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