公开(公告)号：US20190032216A1

公开(公告)日：2019-01-31

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20210262093A1

公开(公告)日：2021-08-26

申请号：US17317418

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20190088485A1

公开(公告)日：2019-03-21

申请号：US16102275

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Ken Kaung LAI ,  Bernard L. HWANG ,  Jeffrey TOBIN ,  Christopher S. OLSEN ,  Malcolm BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01L27/11524 ,  H01J37/32 ,  H01L21/321

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.