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    SHOWERHEAD DESIGN
    1.
    发明申请
    SHOWERHEAD DESIGN 审中-公开

    公开(公告)号：US20190194810A1

    公开(公告)日：2019-06-27

    申请号：US16292078

    申请日：2019-03-04

    Applicant: Applied Materials, Inc.

    Inventor： Kartik SHAH ,  Chaitanya A. PRASAD ,  Kevin Joseph BAUTISTA ,  Jeffrey TOBIN ,  Umesh M. KELKAR ,  Lara HAWRYLCHAK

    IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458

    CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  H01L21/67115

    Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.

    SUBSTRATE CARRIER SYSTEM
    3.
    发明申请
    SUBSTRATE CARRIER SYSTEM 有权

    公开(公告)号：US20170110352A1

    公开(公告)日：2017-04-20

    申请号：US15292680

    申请日：2016-10-13

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey TOBIN

    IPC: H01L21/67 ,  H01L21/68

    CPC classification number: H01L21/67201 ,  H01L21/68 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

    Abstract: Embodiments described herein relate to a substrate carrier system. The substrate carrier system includes a carrier for transferring a substrate within a multi-chamber processing system. The carrier may be placed in a load lock chamber for receiving the substrate, and the substrate is transferred to a processing chamber on the carrier. In the processing chamber, the carrier, with substrate, is disposed on a susceptor. The carrier can also enhance thermal control of the edge of the substrate in the processing chamber. The substrate carrier system further includes positioning features for repeatable positioning of the substrate in the processing chamber and repeatable positioning of the carrier in the load lock chamber and the processing chamber.

    SUSCEPTOR DESIGN TO ELIMINATE DEPOSITION VALLEYS IN THE WAFER
    5.
    发明申请
    SUSCEPTOR DESIGN TO ELIMINATE DEPOSITION VALLEYS IN THE WAFER 审中-公开
    消除沉积物中的沉积物的设计

    公开(公告)号：US20160215393A1

    公开(公告)日：2016-07-28

    申请号：US15000971

    申请日：2016-01-19

    Applicant: Applied Materials, Inc.

    Inventor： Karthik RAMANATHAN ,  Kartik SHAH ,  Nyi O. MYO ,  Schubert S. CHU ,  Jeffrey TOBIN ,  Errol Antonio C. SANCHEZ ,  Palamurali GAJENDRA

    IPC: C23C16/458

    Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

    Abstract translation: 本公开的实施例一般涉及用于半导体衬底的热处理的基座。 在一个实施例中，基座包括第一边缘，耦合到第一边缘并被第一边缘包围的内部区域，以及形成在内部区域上的一个或多个环形突起。 一个或多个环形突起可以在对应于在基底上形成谷的位置的位置处的内部区域上形成，并且一个或多个环形突起有助于减少或消除谷的形成。

    SUPPORT CYLINDER FOR THERMAL PROCESSING CHAMBER
    9.
    发明申请
    SUPPORT CYLINDER FOR THERMAL PROCESSING CHAMBER 有权
    用于热处理室的支撑气缸

    公开(公告)号：US20160300752A1

    公开(公告)日：2016-10-13

    申请号：US15188706

    申请日：2016-06-21

    Applicant: Applied Materials, Inc.

    Inventor： Mehran BEHDJAT ,  Aaron Muir HUNTER ,  Joseph M. RANISH ,  Norman TAM ,  Jeffrey TOBIN ,  Jiping LI ,  Martin TRAN

    IPC: H01L21/687 ,  H01L21/324 ,  H01L21/67

    CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

    Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

    Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括中空圆柱体，其包括内周表面，平行于内周表面的外周表面，其中内周表面和外周表面沿着平行于该内周表面的纵向轴线的方向延伸 支撑圆柱体和从外周表面径向延伸到内周表面的横向部分，其中所述侧向部分包括具有第一倾斜部分，第一圆形部分和第一平面部分的第一端部，所述第一平坦部分将第一倾斜部分和 第一圆形部分和与第一端相对的第二端，第二端部具有第二倾斜部分，第二圆形部分和连接第二倾斜部分和第二圆形部分的第二平面部分。

    METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS
    10.
    发明申请
    METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS 审中-公开

    公开(公告)号：US20190088485A1

    公开(公告)日：2019-03-21

    申请号：US16102275

    申请日：2018-08-13

    Applicant: Applied Materials, Inc.

    Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Ken Kaung LAI ,  Bernard L. HWANG ,  Jeffrey TOBIN ,  Christopher S. OLSEN ,  Malcolm BEVAN

    IPC: H01L21/28 ,  H01L21/02 ,  H01L27/11524 ,  H01J37/32 ,  H01L21/321

    Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

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