公开(公告)号：US20240297059A1

公开(公告)日：2024-09-05

申请号：US18663897

申请日：2024-05-14

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Sathya Swaroop GANTA ,  Kallol BERA ,  Canfeng LAI

IPC: H01L21/677 ,  C23C16/513 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67709 ,  C23C16/513 ,  H01J37/3266 ,  H01L21/02274

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20220122866A1

公开(公告)日：2022-04-21

申请号：US17076024

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Sathya Swaroop GANTA ,  Kallol BERA ,  Canfeng LAI

IPC: H01L21/677 ,  C23C16/513 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

公开(公告)号：US20230377855A1

公开(公告)日：2023-11-23

申请号：US17664324

申请日：2022-05-20

Applicant: Applied Materials, Inc.

Inventor： Mukesh Shivakumaraiah CHITRADURGA ,  Luke BONECUTTER ,  Sathya Swaroop GANTA ,  Canfeng LAI ,  Jay D. PINSON ,  Kaushik Comandoor ALAYAVALLI ,  Kallol BERA

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00

CPC classification number: H01J37/32862 ,  H01J37/32715 ,  H01J37/32091 ,  C23C16/4405 ,  B08B7/0035

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.

公开(公告)号：US20170194128A1

公开(公告)日：2017-07-06

申请号：US15462507

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Canfeng LAI ,  Jeffrey TOBIN ,  Peter I. PORSHNEV ,  Jose Antonio MARIN

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J2237/33

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

公开(公告)号：US20220139679A1

公开(公告)日：2022-05-05

申请号：US17088407

申请日：2020-11-03

Applicant: Applied Materials, Inc.

Inventor： Job George KONNOTH JOSEPH ,  Sathya Swaroop GANTA ,  Kallol BERA ,  Andrew NGUYEN ,  Jay D. PINSON, II ,  Akshay DHANAKSHIRUR ,  Kaushik Comandoor ALAYAVALLI ,  Canfeng LAI ,  Ren-Guan DUAN ,  Jennifer Y. SUN ,  Anil Kumar KALAL ,  Abhishek PANDEY

IPC: H01J37/32 ,  H01J37/20

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

公开(公告)号：US20220064797A1

公开(公告)日：2022-03-03

申请号：US17403056

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Akshay DHANAKSHIRUR ,  Juan Carlos ROCHA-ALVAREZ ,  Kaushik Comandoor ALAYAVALLI ,  Jay D. PINSON, II ,  Rick KUSTRA ,  Badri N. RAMAMURTHI ,  Anup Kumar SINGH ,  Ganesh BALASUBRAMANIAN ,  Bhaskar KUMAR ,  Vinayak Vishwanath HASSAN ,  Canfeng LAI ,  Kallol BERA ,  Sathya Swaroop GANTA

IPC: C23C16/455 ,  H01J37/32

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.