公开(公告)号：US20180283957A1

公开(公告)日：2018-10-04

申请号：US15912365

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： Heng PAN ,  Matthew Scott ROGERS ,  Aaron Muir HUNTER ,  Stephen MOFFATT

IPC: G01J5/08 ,  G01J5/00

Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20190088485A1

公开(公告)日：2019-03-21

申请号：US16102275

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Ken Kaung LAI ,  Bernard L. HWANG ,  Jeffrey TOBIN ,  Christopher S. OLSEN ,  Malcolm BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01L27/11524 ,  H01J37/32 ,  H01L21/321

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20160300712A1

公开(公告)日：2016-10-13

申请号：US15183059

申请日：2016-06-15

Applicant: Applied Materials, Inc.

Inventor： Heng PAN ,  Matthew Scott ROGERS ,  Agus S. TJANDRA ,  Christopher S. OLSEN

IPC: H01L21/02

Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.

Abstract translation: 本文描述了用于选择性氧化硅的装置和方法。 用于暴露的硅表面的选择性氧化的设备包括具有多个壁的热处理室，第一入口连接和第二入口连接，其中壁限定处理室内的处理区域，处理室内的衬底支撑件， 与第一入口连接的氢源，与氢源连接的热源以及与第二入口连接和氧源连接的远程等离子体源。 用于非金属表面的选择性氧化的方法可以包括将基底定位在温度低于800℃的处理室中，将氢气流入处理室，产生包含氧气的远程等离子体，将远程等离子体与 处理室中的氢气以产生活化的处理气体，并将基底暴露于活化气体。

公开(公告)号：US20140342543A1

公开(公告)日：2014-11-20

申请号：US14299788

申请日：2014-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Udayan GANGULY ,  Theresa Kramer GUARINI ,  Matthew Scott ROGERS ,  Yoshitaka YOKOTA ,  Johanes S. SWENBERG ,  Malcolm J. BEVAN

IPC: H01L21/02 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L21/02247 ,  H01L21/02362 ,  H01L21/28202 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract translation: 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。