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公开(公告)号：US20230178419A1
公开(公告)日：2023-06-08
申请号：US18103850
申请日：2023-01-31
Applicant: Applied Materials, Inc.
Inventor： Benjamin COLOMBEAU , Theresa Kramer GUARINI , Malcolm BEVAN , Rui CHENG
CPC classification number: H01L21/76227 , H01L21/02247 , H01L21/02252 , H01J37/32743 , H01J37/32788 , C23C16/56 , C23C16/24 , C23C16/28 , C23C16/50 , H01J37/32816 , H01J2237/332
Abstract: Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.
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公开(公告)号：US20230245863A1
公开(公告)日：2023-08-03
申请号：US18131306
申请日：2023-04-05
Applicant: Applied Materials, Inc.
Inventor： Jian WU , Wei LIU , Theresa Kramer GUARINI , Linlin WANG , Malcolm BEVAN , Lara HAWRYLCHAK
CPC classification number: H01J37/32495 , C23C26/00 , H01J37/32477
Abstract: Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2E12 atoms/centimeters2 of aluminum.
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Patent Agency Ranking
公开(公告)号：US20190088485A1
公开(公告)日：2019-03-21
申请号：US16102275
申请日：2018-08-13
Applicant: Applied Materials, Inc.
Inventor： Matthew Scott ROGERS , Roger CURTIS , Lara HAWRYLCHAK , Ken Kaung LAI , Bernard L. HWANG , Jeffrey TOBIN , Christopher S. OLSEN , Malcolm BEVAN
IPC: H01L21/28 , H01L21/02 , H01L27/11524 , H01J37/32 , H01L21/321
Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.
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公开(公告)号：US20200161171A1
公开(公告)日：2020-05-21
申请号：US16579759
申请日：2019-09-23
Applicant: Applied Materials, Inc.
Inventor： Benjamin COLOMBEAU , Theresa Kramer GUARINI , Malcolm BEVAN , Rui CHENG
Abstract: Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.
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公开(公告)号：US20190385825A1
公开(公告)日：2019-12-19
申请号：US16418274
申请日：2019-05-21
Applicant: Applied Materials, Inc.
Inventor： Jian WU , Wei LIU , Theresa Kramer GUARINI , Linlin WANG , Malcolm BEVAN , Lara HAWRYLCHAK
Abstract: Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2E12 atoms/centimeters2 of aluminum.
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公开(公告)号：US20180082847A1
公开(公告)日：2018-03-22
申请号：US15822435
申请日：2017-11-27
Applicant: Applied Materials, Inc.
Inventor： Wei LIU , Theresa Kramer GUARINI , Huy Q. NGUYEN , Malcolm BEVAN , Houda GRAOUI , Philip A. BOTTINI , Bernard L. HWANG , Lara HAWRYLCHAK , Rene GEORGE
IPC: H01L21/28 , H01J37/32 , H01L21/3105 , H01L29/51
CPC classification number: H01L21/28176 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32477 , H01L21/3105 , H01L29/517
Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
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公开(公告)号：US20160358781A1
公开(公告)日：2016-12-08
申请号：US15171001
申请日：2016-06-02
Applicant: Applied Materials, Inc.
Inventor： Wei LIU , Theresa Kramer GUARINI , Huy Q. NGUYEN , Malcolm BEVAN , Houda GRAOUI , Philip A. BOTTINI , Bernard L. HWANG , Lara HAWRYLCHAK , Rene GEORGE
IPC: H01L21/28 , H01L21/67 , H01L21/3105
CPC classification number: H01L21/28176 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32477 , H01L21/3105 , H01L29/517
Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
Abstract translation: 本文描述的实施例一般涉及用于等离子体处理处理室的方法和装置。 其上形成有栅极叠层的基板可以放置在处理室中，并且可以使用含氢等离子体来处理栅极堆叠，以便固化栅极堆叠中的缺陷。 作为含氢等离子体处理的结果，栅极堆叠具有较低的泄漏和改进的可靠性。 为了保护处理室免受由含氢等离子体产生的Hx +离子和H *基团的影响，处理室可以用等离子体处理，而不需要将基板放置在其中并且在含氢等离子体处理之前。 此外，由介电材料制成的处理室的部件可以涂覆有包含含钇的氧化物的陶瓷涂层，以保护组分免受等离子体的影响。
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