公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20210010160A1

公开(公告)日：2021-01-14

申请号：US17037165

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Theresa Kramer GUARINI ,  Jeffrey A. TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC: C30B25/18 ,  C30B29/06 ,  C30B29/08

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.