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    Oxide etch selectivity systems and methods
    1.
    发明授权
    Oxide etch selectivity systems and methods 有权

    公开(公告)号：US10424463B2

    公开(公告)日：2019-09-24

    申请号：US15131256

    申请日：2016-04-18

    Applicant: Applied Materials, Inc.

    Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

    IPC: C23C16/40 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67

    Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

    Radical-component oxide etch
    3.
    发明授权
    Radical-component oxide etch 有权

    公开(公告)号：US09437451B2

    公开(公告)日：2016-09-06

    申请号：US14703333

    申请日：2015-05-04

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

    HIGH SELECTIVITY GAS PHASE SILICON NITRIDE REMOVAL
    4.
    发明申请
    HIGH SELECTIVITY GAS PHASE SILICON NITRIDE REMOVAL 审中-公开
    高选择性气相氮化硅去除

    公开(公告)号：US20150371865A1

    公开(公告)日：2015-12-24

    申请号：US14308978

    申请日：2014-06-19

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Nitin K. Ingle ,  Anchuan Wang

    IPC: H01L21/311 ,  C09K13/08

    CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244

    Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while retaining silicon, such as polysilicon.

    Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用部分远程等离子体激发的气相蚀刻。 远程等离子体激发含氟前体，产生的等离子体流出物流入基板处理区域。 含氢前体，例如 水同时流入基板处理区域而没有等离子体激发。 等离子体流出物与组合与氮化硅反应的衬底处理区域中的不含氢的前体组合。 等离子体流出物与图案化的异质结构反应以选择性地去除氮化硅，同时保留硅，例如多晶硅。

    Doped silicon oxide etch
    5.
    发明授权
    Doped silicon oxide etch 有权
    掺杂氧化硅蚀刻

    公开(公告)号：US09202708B1

    公开(公告)日：2015-12-01

    申请号：US14523647

    申请日：2014-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Sang-jin Kim ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove two separate regions of silicon oxide at distinct etch rates. The methods may be used to remove doped silicon oxide faster than undoped silicon oxide or more lightly-doped silicon oxide. The relative humidity in the substrate processing region may be low during the etch process to increase the etch selectivity of the doped silicon oxide.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的氧化硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。 远程等离子体与含氧前体组合起来激发含氟前体。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽或醇组合。 该组合与图案化的异质结构反应以以不同的蚀刻速率去除两个分离的氧化硅区域。 该方法可以用于比未掺杂的氧化硅或更多的轻掺杂的氧化硅更快地除去掺杂的氧化硅。 在蚀刻工艺期间，衬底处理区域中的相对湿度可能较低，以增加掺杂氧化硅的蚀刻选择性。

    Non-local plasma oxide etch
    8.
    发明授权
    Non-local plasma oxide etch 有权
    非局部等离子体氧化物蚀刻

    公开(公告)号：US09111877B2

    公开(公告)日：2015-08-18

    申请号：US13790668

    申请日：2013-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

    Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

    Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

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