-
公开(公告)号：US20230029265A1
公开(公告)日：2023-01-26
申请号：US17384096
申请日：2021-07-23
Applicant: Applied Materials, Inc.
Inventor： Xi Chen , Shreesha Yogish Rao , Sheng Guo , Chi H. Ching , Thomas Blasius Brezoczky , Cheng-Hsiung Tsai
Abstract: Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.
-
Patent Agency Ranking
公开(公告)号：US12249494B2
公开(公告)日：2025-03-11
申请号：US18500951
申请日：2023-11-02
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
-
公开(公告)号：US20240062999A1
公开(公告)日：2024-02-22
申请号：US18500951
申请日：2023-11-02
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
CPC classification number: H01J37/32825 , H01J37/32357 , H01J37/32449 , H01J37/32889
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
-
公开(公告)号：US11854773B2
公开(公告)日：2023-12-26
申请号：US17214707
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
CPC classification number: H01J37/32825 , H01J37/32357 , H01J37/32449 , H01J37/32889
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
-
公开(公告)号：US11772137B2
公开(公告)日：2023-10-03
申请号：US17384096
申请日：2021-07-23
Applicant: Applied Materials, Inc.
Inventor： Xi Chen , Shreesha Yogish Rao , Sheng Guo , Chi H. Ching , Thomas Blasius Brezoczky , Cheng-Hsiung Tsai
CPC classification number: B08B7/0035 , B08B13/00 , H01J37/32082 , H01J37/32357 , H01J37/32715 , H01J37/32834 , H01J37/32935 , H01J2237/2007 , H01J2237/335 , H01J2237/3341
Abstract: Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.
-
公开(公告)号：US20210305028A1
公开(公告)日：2021-09-30
申请号：US17214707
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
-
-
-
-
-
Search Results
6
records
(took 0.013 seconds)
