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公开(公告)号：US11555250B2
公开(公告)日：2023-01-17
申请号：US17241241
申请日：2021-04-27
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Michael Guo , Marek W Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.
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公开(公告)号：US12249494B2
公开(公告)日：2025-03-11
申请号：US18500951
申请日：2023-11-02
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
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公开(公告)号：US11932950B2
公开(公告)日：2024-03-19
申请号：US18097152
申请日：2023-01-13
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Michael Guo , Marek W. Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
CPC classification number: C23F17/00 , B08B3/04 , B23C3/00 , C23C14/5873 , C23F1/16 , C23F1/20 , H01L21/67184
Abstract: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.
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Patent Agency Ranking
公开(公告)号：US20230151497A1
公开(公告)日：2023-05-18
申请号：US18097152
申请日：2023-01-13
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Michael Guo , Marek W. Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
Abstract: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.
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公开(公告)号：US20240062999A1
公开(公告)日：2024-02-22
申请号：US18500951
申请日：2023-11-02
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
CPC classification number: H01J37/32825 , H01J37/32357 , H01J37/32449 , H01J37/32889
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
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公开(公告)号：US11854773B2
公开(公告)日：2023-12-26
申请号：US17214707
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
CPC classification number: H01J37/32825 , H01J37/32357 , H01J37/32449 , H01J37/32889
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
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公开(公告)号：US20210339354A1
公开(公告)日：2021-11-04
申请号：US17241241
申请日：2021-04-27
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Michael Guo , Marek W. Radko , Steven Victor Sansoni , Nagendra Madiwal , Matvey Farber , Pingping Gou , Song-Moon Suh , Jeffrey C. Hudgens , Yuji Murayama , Anurag Bansal , Shaofeng Chen , Michael Kuchar
Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.
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公开(公告)号：US20210305028A1
公开(公告)日：2021-09-30
申请号：US17214707
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Yuanhong Guo , Sheng Guo , Marek Radko , Steve Sansoni , Xiaoxiong Yuan , See-Eng Phan , Yuji Murayama , Pingping Gou , Song-Moon Suh
IPC: H01J37/32
Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.
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