公开(公告)号：US20240062999A1

公开(公告)日：2024-02-22

申请号：US18500951

申请日：2023-11-02

Applicant: Applied Materials, Inc.

Inventor： Yuanhong Guo ,  Sheng Guo ,  Marek Radko ,  Steve Sansoni ,  Xiaoxiong Yuan ,  See-Eng Phan ,  Yuji Murayama ,  Pingping Gou ,  Song-Moon Suh

IPC: H01J37/32

CPC classification number: H01J37/32825 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32889

Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

公开(公告)号：US11854773B2

公开(公告)日：2023-12-26

申请号：US17214707

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Yuanhong Guo ,  Sheng Guo ,  Marek Radko ,  Steve Sansoni ,  Xiaoxiong Yuan ,  See-Eng Phan ,  Yuji Murayama ,  Pingping Gou ,  Song-Moon Suh

IPC: H01J37/32

CPC classification number: H01J37/32825 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32889

Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

公开(公告)号：US20210305028A1

公开(公告)日：2021-09-30

申请号：US17214707

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Yuanhong Guo ,  Sheng Guo ,  Marek Radko ,  Steve Sansoni ,  Xiaoxiong Yuan ,  See-Eng Phan ,  Yuji Murayama ,  Pingping Gou ,  Song-Moon Suh

IPC: H01J37/32

Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

公开(公告)号：US11384429B2

公开(公告)日：2022-07-12

申请号：US15598687

申请日：2017-05-18

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC: C23C16/16 ,  H01L21/324 ,  H01L21/768 ,  C23C16/02 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US12249494B2

公开(公告)日：2025-03-11

申请号：US18500951

申请日：2023-11-02

Applicant: Applied Materials, Inc.

Inventor： Yuanhong Guo ,  Sheng Guo ,  Marek Radko ,  Steve Sansoni ,  Xiaoxiong Yuan ,  See-Eng Phan ,  Yuji Murayama ,  Pingping Gou ,  Song-Moon Suh

IPC: H01J37/32

Abstract: A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

公开(公告)号：US11959167B2

公开(公告)日：2024-04-16

申请号：US17834633

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC: C23C16/16 ,  C23C16/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768

CPC classification number: C23C16/16 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.