公开(公告)号：US10600639B2

公开(公告)日：2020-03-24

申请号：US16036635

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US20200090907A1

公开(公告)日：2020-03-19

申请号：US16134200

申请日：2018-09-18

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Tae Cho ,  Theodore Wou ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  C23C16/513 ,  H01J37/305 ,  H01L21/3065

Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.

公开(公告)号：US20180138049A1

公开(公告)日：2018-05-17

申请号：US15350803

申请日：2016-11-14

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US20180323075A1

公开(公告)日：2018-11-08

申请号：US16036635

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.

公开(公告)号：US10026621B2

公开(公告)日：2018-07-17

申请号：US15350803

申请日：2016-11-14

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.