公开(公告)号：US11821088B2

公开(公告)日：2023-11-21

申请号：US17331401

申请日：2021-05-26

申请人： Applied Materials, Inc.

发明人： Shu-Kwan Lau ,  Koji Nakanishi ,  Toshiyuki Nakagawa ,  Zuoming Zhu ,  Zhiyuan Ye ,  Joseph M. Ranish ,  Nyi O. Myo ,  Errol Antonio C. Sanchez ,  Schubert S. Chu

IPC分类号： C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

CPC分类号： C23C16/46 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0604 ,  B23K26/08 ,  B23K26/123 ,  B23K26/126 ,  B23K26/127 ,  B23K26/128 ,  B23K26/352 ,  C23C16/52 ,  H01L21/6719 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68757

摘要： Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US11594445B2

公开(公告)日：2023-02-28

申请号：US16294603

申请日：2019-03-06

申请人： Applied Materials, Inc.

发明人： Jian Wu ,  Toshiyuki Nakagawa ,  Koji Nakanishi

IPC分类号： H01L21/687 ,  C23C16/50 ,  H01L21/67 ,  C23C16/24

摘要： The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

公开(公告)号：US11177144B2

公开(公告)日：2021-11-16

申请号：US16407670

申请日：2019-05-09

申请人： Applied Materials, Inc.

发明人： Shu-Kwan Lau ,  Zhiyuan Ye ,  Zuoming Zhu ,  Koji Nakanishi ,  Toshiyuki Nakagawa ,  Nyi O. Myo ,  Schubert S. Chu

IPC分类号： H05B3/68 ,  H01L21/67 ,  B23K26/06 ,  B23K26/073

摘要： Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate alters temperature profile. The shape of the beam spot produced by the spot heating module can be modified without making changes to the optics of the spot heating module.

公开(公告)号：US10373859B2

公开(公告)日：2019-08-06

申请号：US16029159

申请日：2018-07-06

申请人： Applied Materials, Inc.

发明人： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC分类号： H01L21/687 ,  H01L21/67 ,  C23C16/50

摘要： A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US11842907B2

公开(公告)日：2023-12-12

申请号：US16923949

申请日：2020-07-08

申请人： Applied Materials, Inc.

发明人： Shu-Kwan Danny Lau ,  Toshiyuki Nakagawa ,  Zhiyuan Ye

IPC分类号： H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  B23K26/00 ,  B23K26/08 ,  H01L21/687 ,  H01L21/268 ,  B23K26/06 ,  B23K103/00 ,  F27D9/00

CPC分类号： H01L21/67115 ,  B23K26/0006 ,  B23K26/0648 ,  B23K26/0869 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/268 ,  H01L21/68764 ,  B23K2103/56 ,  F27D2009/007

摘要： Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

公开(公告)号：US11021795B2

公开(公告)日：2021-06-01

申请号：US16170255

申请日：2018-10-25

申请人： Applied Materials, Inc.

发明人： Shu-Kwan Lau ,  Koji Nakanishi ,  Toshiyuki Nakagawa ,  Zuoming Zhu ,  Zhiyuan Ye ,  Joseph M. Ranish ,  Nyi O. Myo ,  Errol Antonio C. Sanchez ,  Schubert S. Chu

IPC分类号： C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

摘要： Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US10056286B2

公开(公告)日：2018-08-21

申请号：US15838060

申请日：2017-12-11

申请人： Applied Materials, Inc.

发明人： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC分类号： H01L21/687 ,  C23C16/50 ,  H01L21/67

CPC分类号： H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

摘要： A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US09842759B2

公开(公告)日：2017-12-12

申请号：US15144446

申请日：2016-05-02

申请人： Applied Materials, Inc.

发明人： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC分类号： C23C16/50 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

摘要： A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

公开(公告)号：US09330955B2

公开(公告)日：2016-05-03

申请号：US14218597

申请日：2014-03-18

申请人： Applied Materials, Inc.

发明人： Mehran Behdjat ,  Norman L. Tam ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Koji Nakanishi ,  Toshiyuki Nakagawa

IPC分类号： B23Q3/00 ,  H01L21/687

CPC分类号： H01L21/68757 ,  C23C16/50 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2221/683

摘要： A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

摘要翻译： 提供了用于半导体处理的支撑环。 支撑环包括由内边缘和外边缘限定的环形体。 内边缘和外边缘围绕中心轴线是同心的。 环形体还包括在内边缘处从环形体的第一侧延伸的第一侧，第二侧和凸起的环形肩部。 支撑环还包括在第一侧上的涂层。 涂层具有邻近凸起的环形肩部的厚度减小的内部区域。