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    Plasma processing chamber having magnetic assembly and method
    1.
    发明申请
    Plasma processing chamber having magnetic assembly and method 审中-公开
    等离子体处理室具有磁性装配和方法

    公开(公告)号：US20030192646A1

    公开(公告)日：2003-10-16

    申请号：US10122271

    申请日：2002-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Robert W. Wu ,  Wing L. Cheng ,  You Wang ,  Senh Thach ,  Hamid Noorbakhsh ,  Kwok Manus Wong ,  Jennifer Y. Sun

    IPC: C23F001/00 ,  C23C016/00

    CPC classification number: H01J37/32623

    Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.

    Abstract translation: 用于等离子体处理室的磁性组件包括具有径向向外面和径向向内开口的环形壳体，密封径向向内开口的盖板和环形壳体中的多个磁体。 磁体可以在预先组装的模块中，环形壳体内的环形结构彼此邻接。 使用该磁性组件的等离子体处理室包括可以装配在磁性组件的内半径中的基板支撑件，用于将处理气体保持在室内压力的气体供应源，用于激励处理气体的气体增压器和排气 以排出工艺气体。

    Process chamber having multiple gas distributors and method
    2.
    发明申请
    Process chamber having multiple gas distributors and method 失效
    具有多个气体分配器和方法的处理室

    公开(公告)号：US20030033979A1

    公开(公告)日：2003-02-20

    申请号：US09930938

    申请日：2001-08-16

    Applicant: Applied Materials, Inc.

    Inventor： Arnold V. Kholodenko ,  Dan Katz ,  Wing L. Cheng

    IPC: C23C016/00 ,  C23F001/00

    CPC classification number: C23C16/45519 ,  C23C16/455

    Abstract: A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

    Abstract translation: 基板处理室具有用于支撑基板的基板支撑件和围绕基板支撑件的排气导管。 第一工艺气体分配器以第一流量引导诸如非反应性气体的第一工艺气体，例如基板周边和朝向排气管道，以在衬底周围形成非反应性气体帘幕。 第二工艺气体分配器以比第一流量低的第二流量向衬底的中心部分引导第二工艺气体，例如反应性CVD或蚀刻剂气体。 气体激发器激励腔室中的第一和第二处理气体。 控制器操作衬底支撑件，气体流量计，气体激励器和节流阀，以处理通电气体中的衬底。

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