SENSOR ASSEMBLY AND METHODS OF VAPOR MONITORING IN PROCESS CHAMBERS

    公开(公告)号:US20230018891A1

    公开(公告)日:2023-01-19

    申请号:US17374189

    申请日:2021-07-13

    Abstract: One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.

    DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR
    2.
    发明申请
    DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR 审中-公开
    用于感应耦合等离子体(ICP)反应器的动态离子辐射和离子射孔

    公开(公告)号:US20160181067A1

    公开(公告)日:2016-06-23

    申请号:US15055032

    申请日:2016-02-26

    CPC classification number: H01J37/321 H01J37/32623 H01J37/32633 H01J2237/334

    Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

    Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体,设置在处理区域中并具有基板接收表面的基板支撑件,设置在室主体面向基板接收表面的壁上的等离子体源,离子基屏蔽 设置在等离子体源和基板接收表面之间,以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸,形状和/或中心轴位置可以使用插入件来改变。

    APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION

    公开(公告)号:US20190096634A1

    公开(公告)日:2019-03-28

    申请号:US16203342

    申请日:2018-11-28

    Abstract: Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.

    EDGE RING FOR BEVEL POLYMER REDUCTION
    4.
    发明申请
    EDGE RING FOR BEVEL POLYMER REDUCTION 审中-公开
    用于水性聚合物还原的边缘环

    公开(公告)号:US20160307742A1

    公开(公告)日:2016-10-20

    申请号:US14690121

    申请日:2015-04-17

    Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

    Abstract translation: 本公开的实施例包括用于从衬底周边区域(例如衬底的边缘或斜面)减少残余膜层的方法和装置。 在等离子体处理之后,衬底斜面,背面和衬底周边区域的污染可能会降低。 在一个实施例中,边缘环包括基部圆环,其具有限定其上形成的中心开口的内表面和限定基部圆环的周边的外表面。 基座圆环包括上身和连接到上身的下部。 在基部圆环的内表面和上身的第一上表面上方形成台阶。 该步骤限定在上身的第一上表面上方的口袋。 形成在基部圆环的第一上表面上的多个凸起特征。

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