公开(公告)号：US20160126089A1

公开(公告)日：2016-05-05

申请号：US14577943

申请日：2014-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingmei LIANG ,  Jung Chan LEE ,  Yong SUN

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02348

Abstract: Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation.

Abstract translation: 本文公开了用于沉积和固化可流动介电层的方法。 方法可以包括形成可流动的电介质层，将可流动介电层浸入含氧气体中，吹扫室并用UV辐射固化该层。 通过在含氧气体预浸渍后固化该层，该层可以在UV照射期间更完全固化。

公开(公告)号：US20200286773A1

公开(公告)日：2020-09-10

申请号：US16882989

申请日：2020-05-26

Applicant: Applied Materials, Inc.

Inventor： Jingmei LIANG ,  Yong SUN ,  Jinrui GUO ,  Praket P. JHA ,  Jung Chan LEE ,  Tza-Jing GUNG ,  Mukund SRINIVASAN

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/32 ,  C23C16/36 ,  C23C16/40 ,  C23C16/30 ,  C23C16/34 ,  C23C16/505 ,  C23C16/04

Abstract: Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

公开(公告)号：US20180330980A1

公开(公告)日：2018-11-15

申请号：US15977380

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Jingmei LIANG ,  Yong SUN ,  Jinrui GUO ,  Praket P. JHA ,  Jung Chan LEE ,  Tza-Jing GUNG ,  Mukund SRINIVASAN

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/32 ,  C23C16/36 ,  C23C16/40 ,  C23C16/30 ,  C23C16/34

Abstract: Implementations disclosed herein relate to methods for forming and filling trenches in a substrate with a flowable dielectric material. In one implementation, the method includes subjecting a substrate having at least one trench to a deposition process to form a flowable layer over a bottom surface and sidewall surfaces of the trench in a bottom-up fashion until the flowable layer reaches a predetermined deposition thickness, subjecting the flowable layer to a first curing process, the first curing process being a UV curing process, subjecting the UV cured flowable layer to a second curing process, the second curing process being a plasma or plasma-assisted process, and performing sequentially and repeatedly the deposition process, the first curing process, and the second curing process until the plasma cured flowable layer fills the trench and reaches a predetermined height over a top surface of the trench.

公开(公告)号：US20200381248A1

公开(公告)日：2020-12-03

申请号：US16817007

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yong SUN ,  Praket Prakash JHA ,  Jingmei LIANG ,  Martin Jay SEAMONS ,  DongQing LI ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Wolfgang R. ADERHOLD

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/30

Abstract: A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.