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    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS
    1.
    发明申请
    PLASMA TREATMENT PROCESS TO DENSIFY OXIDE LAYERS 有权

    公开(公告)号：US20230030436A1

    公开(公告)日：2023-02-02

    申请号：US17390151

    申请日：2021-07-30

    Applicant: Applied Materials, Inc.

    Inventor： Jung Chan LEE ,  Mun Kyu PARK ,  Jun LEE ,  Euhngi LEE ,  Kyu-Ha SHIM ,  Deven Matthew Raj MITTAL ,  Sungho JO ,  Timothy MILLER ,  Jingmei LIANG ,  Praket Prakash JHA ,  Sanjay G. KAMATH

    IPC: H01L21/02

    Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

    CYCLIC SEQUENTIAL PROCESSES FOR FORMING HIGH QUALITY THIN FILMS
    3.
    发明申请
    CYCLIC SEQUENTIAL PROCESSES FOR FORMING HIGH QUALITY THIN FILMS 审中-公开
    用于形成高质量薄膜的循环顺序方法

    公开(公告)号：US20160244879A1

    公开(公告)日：2016-08-25

    申请号：US15001384

    申请日：2016-01-20

    Applicant: Applied Materials, Inc.

    Inventor： Jingmei LIANG ,  Jung Chan LEE ,  Jinrui GUO ,  Mukund SRINIVASAN

    IPC: C23C16/50

    CPC classification number: C23C16/045 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/483 ,  C23C16/505 ,  C23C16/56

    Abstract: Methods are described for a cyclical deposition and curing process. More particularly, the implementations described herein provide a cyclic sequential deposition and curing process for filling features formed on a substrate. Features are filled to ensure electrical isolation of features in integrated circuits formed on a substrate. The processes described herein use flowable film deposition processes that have been effective in reducing voids or seams produced in features formed on a substrate. However, conventional gap-filling methods using flowable films typically contain dielectric materials that have undesirable physical and electrical properties. In particular, film density is not uniform, film dielectric constant varies across the film thickness, film stability is not ideal, film refractive index is inconsistent, and resistance to dilute hydrofluoric acid (DHF) is not ideal in conventional flowable films. The cyclic sequential deposition and curing processes address the issues described herein to create films with higher quality and increased lifetime.

    Abstract translation: 描述了循环沉积和固化过程的方法。 更具体地，本文所述的实施方案提供了用于填充形成在基底上的特征的循环顺序沉积和固化过程。 填充特征以确保在基板上形成的集成电路中的特征的电隔离。 本文所述的方法使用可有效减少在衬底上形成的特征中产生的空隙或接缝的可流动膜沉积工艺。 然而，使用可流动膜的常规间隙填充方法通常包含具有不期望的物理和电学性质的介电材料。 特别是，膜密度不均匀，膜介电常数在膜厚度上变化，膜稳定性不理想，膜折射率不一致，并且在常规流动膜中耐稀释氢氟酸（DHF）不是理想的。 循环顺序沉积和固化过程解决了本文所述的问题，以创建具有更高质量和更长寿命的膜。

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