公开(公告)号：US20030104761A1

公开(公告)日：2003-06-05

申请号：US10342653

申请日：2003-01-14

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek

IPC分类号： B24B049/00 ,  B24B051/00

CPC分类号： G01B11/06 ,  B24B37/04 ,  B24B49/12 ,  B24D7/12 ,  G01B9/02021 ,  G01B9/02027

摘要： The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

公开(公告)号：US20010036793A1

公开(公告)日：2001-11-01

申请号：US09874086

申请日：2001-06-04

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Andreas Norbert Wiswesser ,  Judon Tony Pan ,  Boguslaw Swedek

IPC分类号： B24B049/00

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G01B11/0683 ,  H01L21/3212

摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

摘要翻译： 一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。 该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。

公开(公告)号：US20040116047A1

公开(公告)日：2004-06-17

申请号：US10722716

申请日：2003-11-25

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Andreas Norbert Wiswesser ,  Judon Tony Pan ,  Boguslaw Swedek

IPC分类号： B24B049/00

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  G01B11/0683 ,  H01L21/3212

摘要： An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.

摘要翻译： 一种装置以及一种方法确定化学机械抛光衬底上的金属层的终点。 该装置的方法包括使基板的表面与具有窗口的抛光垫接触; 引起基板和抛光垫之间的相对运动; 将光束引导通过窗口，抛光垫相对于基底的运动导致光束在穿过基底的路径中移动; 检测来自基板和保持环的光束反射; 产生与光束反射相关联的反射数据; 将反射数据分割成多个径向范围; 以及根据所述多个径向范围内的反射数据识别所述预定图案以建立所述端点。

公开(公告)号：US20030104760A1

公开(公告)日：2003-06-05

申请号：US10339959

申请日：2003-01-10

申请人： Applied Materials, Inc. a Delaware corporation

发明人： Bret W. Adams ,  Boguslaw A. Swedek ,  Rajeev Bajaj ,  Savitha Nanjangud ,  Andreas Norbert Wiswesser ,  Stan D. Tsai ,  David A. Chan ,  Fred C. Redeker ,  Manoocher Birang

IPC分类号： B24B049/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

摘要： An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.