公开(公告)号：US20040142646A1

公开(公告)日：2004-07-22

申请号：US10754997

申请日：2004-01-10

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B005/00 ,  B24B029/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

公开(公告)号：US20030181137A1

公开(公告)日：2003-09-25

申请号：US10394599

申请日：2003-03-21

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Fred C. Redeker ,  Manoocher Birang ,  Shijian Li ,  Sasson Somekh

IPC分类号： B24B049/00

CPC分类号： B24B37/005 ,  B24B21/04 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

摘要翻译： 用于化学机械抛光的抛光制品。 抛光制品包括具有抛光表面的大致细长的抛光片。 抛光制品由基本上不透明的材料形成，并且具有基本上延伸至少半透明的抛光片的长度的离散区域。

公开(公告)号：US20030176081A1

公开(公告)日：2003-09-18

申请号：US10412038

申请日：2003-04-10

申请人： Applied Materials, Inc., a Delaware corporation

发明人： Fred C. Redeker ,  Rajeev Bajaj

IPC分类号： H01L021/31

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  G01B7/105

摘要： A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

公开(公告)号：US20030104760A1

公开(公告)日：2003-06-05

申请号：US10339959

申请日：2003-01-10

申请人： Applied Materials, Inc. a Delaware corporation

发明人： Bret W. Adams ,  Boguslaw A. Swedek ,  Rajeev Bajaj ,  Savitha Nanjangud ,  Andreas Norbert Wiswesser ,  Stan D. Tsai ,  David A. Chan ,  Fred C. Redeker ,  Manoocher Birang

IPC分类号： B24B049/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

摘要： An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.