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13 条记录 (耗时 0.02 秒)

    Piezoelectric wafer gripping system for robot blades
    1.
    发明授权
    Piezoelectric wafer gripping system for robot blades 失效
    用于机器人刀片的压电晶片夹紧系统

    公开(公告)号：US5788453A

    公开(公告)日：1998-08-04

    申请号：US657721

    申请日：1996-05-30

    申请人： Arik Donde ,  Herzel Laor

    发明人： Arik Donde ,  Herzel Laor

    IPC分类号： B25J15/08 ,  B25J15/02 ,  H01L21/677 ,  H01L21/687 ,  B25J15/12

    CPC分类号： B25J15/02 ,  H01L21/68707 ,  Y10S414/141

    摘要： A piezoelectric gripping system firmly secures a semiconductor wafer or other workpiece onto a robotic transfer blade so as to allow for acceleration forces that exceed the frictional holding force between the blade and workpiece. To prevent production of contaminating particulates during grasping, the piezoelectric grippers of the system are independently actuated into slight contact with the workpiece so as to prevent frictional movement of the workpiece relative to the blade during the grasping operation. Once all of the grippers are in slight contact with the workpiece, the voltage to each gripper is increased by a predetermined amount to thereby uniformly increase the force exerted by each gripper on the workpiece and to thereby more firmly secure the workpiece to the blade. Thereafter, the blade may transfer the workpiece at extremely high speeds without the workpiece moving frictionally relative to the blade.

    摘要翻译： 压电夹持系统将半导体晶片或其他工件牢固地固定到机器人转印刀片上，以便允许超过刀片和工件之间的摩擦保持力的加速力。 为了防止在抓握期间产生污染微粒，系统的压电夹持器被独立地致动为与工件轻微接触，以便在抓取操作期间防止工件相对于叶片的摩擦运动。 一旦所有夹具与工件轻微接触，则每个夹具的电压增加预定的量，从而均匀地增加每个夹持器对工件的作用力，从而将工件更牢固地固定在叶片上。 此后，刀片可以以非常高的速度传送工件，而不会使工件相对于刀片摩擦地运动。

    Vacuum processing chambers and method for producing
    7.
    发明授权
    Vacuum processing chambers and method for producing 失效
    真空处理室及其制造方法

    公开(公告)号：US06182851B2

    公开(公告)日：2001-02-06

    申请号：US09151187

    申请日：1998-09-10

    申请人： Arik Donde

    发明人： Arik Donde

    IPC分类号： B65D2504

    CPC分类号： H01L21/67109 ,  B29C47/00 ,  B29C47/0023 ,  H01J37/16 ,  H01J37/32458 ,  H01L21/67028 ,  Y10S29/047 ,  Y10S220/916 ,  Y10T29/49826

    摘要： A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating of cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

    摘要翻译： 存在一种结构和方法，其中通过挤压形成负载锁定室的侧壁，以产生可再现的管状结构以形成具有极大改善的真空性能的真空室的壁。 挤压结构的使用减小了尺寸变化性，增加了表面光洁度的均匀性，并且提供了均匀的顶部和底部密封装置，其允许完全和容易地进入侧壁的内部进行清洁。 在另一种布置中，当室的壁被挤出时，传热流体通道可以同时形成在腔室的壁中。 然后可以将冷却液体的加热循环通过室的壁中的通道，以加热室的壁，以防止室壁内部的冷凝，或者提供如冷却晶片所需的冷却 在高温下加工后。

    Temperature stabilization for substrate processing
    8.
    发明授权
    Temperature stabilization for substrate processing 有权
    基板加工温度稳定

    公开(公告)号：US07528349B1

    公开(公告)日：2009-05-05

    申请号：US11532748

    申请日：2006-09-18

    申请人： Yehiel Gotkis ,  Arik Donde ,  Vincenzo Lordi

    发明人： Yehiel Gotkis ,  Arik Donde ,  Vincenzo Lordi

    IPC分类号： H05B3/68 ,  F26B19/00

    CPC分类号： H01L21/67103 ,  G03F7/70716 ,  G03F7/70875 ,  H01L21/67109

    摘要： A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

    摘要翻译： 公开了温度稳定系统，方法，物质组成和衬底处理系统。 吸热材料与衬底热接触地设置。 吸热材料的特征在于固液相转变温度在用于材料加工基材的期望温度范围内。 当基板经受导致热传递到基板中的材料加工时，吸热材料的固 - 液相变使基板的温度稳定。

    Method for producing vacuum processing chambers
    9.
    发明授权
    Method for producing vacuum processing chambers 失效
    真空处理室的制造方法

    公开(公告)号：US06405423B1

    公开(公告)日：2002-06-18

    申请号：US09711192

    申请日：2000-11-13

    申请人： Arik Donde

    发明人： Arik Donde

    IPC分类号： B23P1100

    CPC分类号： H01L21/67109 ,  B29C47/00 ,  B29C47/0023 ,  H01J37/16 ,  H01J37/32458 ,  H01L21/67028 ,  Y10S29/047 ,  Y10S220/916 ,  Y10T29/49826

    摘要： A structure and method are present where a sidewall of a load lock chamber is formed by extrusion, to produce a reproducible tubular structure to form the walls of a vacuum chamber with greatly improved vacuum performance. The use of an extruded structure reduces the dimensional variability, increases the uniformity of a surface finish, and provides uniform top and bottom sealing arrangements, which allow full and easy access to the inside of the sidewalls for cleaning. In another arrangement heat transfer fluid passages can be formed in the wall of the chamber simultaneously as the wall of the chamber is extruded. Heating or cooling liquid can then be circulated through the passages in the wall of the chamber to heat the walls of the chamber as sometimes required to prevent condensation on the inside of the chamber walls, or provide cooling as is required for cool down of a wafer, after processing at an elevated temperature.

    摘要翻译： 存在一种结构和方法，其中通过挤压形成负载锁定室的侧壁，以产生可再现的管状结构以形成具有极大改善的真空性能的真空室的壁。 挤压结构的使用减小了尺寸变化性，增加了表面光洁度的均匀性，并且提供了均匀的顶部和底部密封装置，其允许完全和容易地进入侧壁的内部进行清洁。 在另一种布置中，当室的壁被挤出时，传热流体通道可以同时形成在腔室的壁中。 然后可以将加热或冷却液体通过腔室壁中的通道循环，以加热腔室的壁，以防止室壁内部冷凝，或者提供如冷却晶片所需的冷却 在高温下加工后。