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公开(公告)号:US20240055035A1
公开(公告)日:2024-02-15
申请号:US17885753
申请日:2022-08-11
Applicant: Arm Limited
Inventor: Edward Martin McCombs, JR.
Abstract: Dynamic power management for an on-chip memory, such as a system cache memory as well as other memories, is provided. The memory includes wordline sections, input/output (I/O) circuitry, and control circuitry. Each wordline section includes a number of wordlines, and each wordline section is coupled to a different wordline control circuitry. The control circuitry is configured to, in response to receiving an access request including an address, decode the address including determine, based on the address, an associated wordline, and determine, based on the associated wordline, an associated wordline section. The control circuitry is further configured to apply power to wordline control circuitry coupled to the associated wordline section.
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公开(公告)号:US20250068563A1
公开(公告)日:2025-02-27
申请号:US18947239
申请日:2024-11-14
Applicant: Arm Limited
Inventor: Andrew David Tune , Sean James Salisbury , Edward Martin McCombs, JR.
IPC: G06F12/0802
Abstract: Circuitry including cache storage and control circuitry is provided. The cache storage includes an array of random access memory storage elements, and is configured to store data in multiple cache sectors, each cache sector including a number of cache storage data units. The control circuitry is configured to control access to the cache storage including, for example, accessing the cache storage data units in the cache sectors. After accessing a cache storage data unit in a cache sector, the energy requirement and/or latency for the next access to a cache storage data unit in the same sector is lower than the energy requirement and/or latency for the next access to a cache storage data unit in a different same sector.
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公开(公告)号:US20220319585A1
公开(公告)日:2022-10-06
申请号:US17218949
申请日:2021-03-31
Applicant: Arm Limited
Inventor: Andy Wangkun Chen , Munish Kumar , Ayush Kulshrestha , Rajiv Kumar Sisodia , Yew Keong Chong , Kumaraswamy Ramanathan , Edward Martin McCombs, JR.
IPC: G11C11/418 , G11C11/16
Abstract: Various implementations described herein are related to a device with a wordline driver that provides a wordline signal to a wordline based on a row selection signal and a row clock signal. The device may have row selector logic that provides the row selection signal to the wordline driver based on first input signals in a periphery voltage domain. The device may also have level shifter circuitry that provides the row clock signal to the wordline driver in a core voltage domain based on second input signals in the periphery voltage domain.
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公开(公告)号:US20240029813A1
公开(公告)日:2024-01-25
申请号:US17870457
申请日:2022-07-21
Applicant: Arm Limited
Inventor: Edward Martin McCombs, JR. , Cyrille Nicolas Dray , Nicolaas Klarinus Johannes Van Winkelhoff
CPC classification number: G11C29/4401 , G11C29/12005
Abstract: Various implementations described herein are directed to a method that tests and repairs memory fabricated on a wafer or a package. The method may generate and store a reuse table based on memory repair results. The method may manufacture the memory after repairing the memory. The method may access and reuse data stored in the reuse table to repair the memory after manufacturing the memory.
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公开(公告)号:US20240005983A1
公开(公告)日:2024-01-04
申请号:US17856928
申请日:2022-07-01
Applicant: Arm Limited
Inventor: Rahul Mathur , Edward Martin McCombs, JR. , Hsin-Yu Chen
IPC: G11C11/418 , G11C11/412
CPC classification number: G11C11/418 , G11C11/412
Abstract: Various implementations described herein are directed to a device having memory with banks of bitcells with each bank having a bitcell array. The device may have header circuitry that powers-up a selected bank and powers-down unselected banks during a wake-up mode of operation. In some instances, only the selected bank of the memory is powered-up with the header circuitry during the wake-up mode of operation.
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公开(公告)号:US20230402092A1
公开(公告)日:2023-12-14
申请号:US17835912
申请日:2022-06-08
Applicant: Arm Limited
Inventor: Rahul Mathur , Hsin-Yu Chen , Phani Raja Bhushan Chalasani , Kyung Woo Kim , Edward Martin McCombs, JR.
IPC: G11C11/419 , G11C11/412
CPC classification number: G11C11/419 , G11C11/412
Abstract: Various implementations described herein are directed to a device having memory circuitry with bitlines coupled to an array of bitcells. The device may include precharge circuitry that precharges the bitlines during modes of operation including a standby mode of operation and an active mode of operation. In some instances, the precharge circuitry may include a low power mode of operation that prevents precharge of the bitlines during the standby mode of operation.
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公开(公告)号:US20230154526A1
公开(公告)日:2023-05-18
申请号:US17530095
申请日:2021-11-18
Applicant: Arm Limited
Inventor: Edward Martin McCombs, JR. , Hsin-Yu Chen
IPC: G11C11/4091 , G11C11/4094 , G11C11/4074 , G11C11/4076
CPC classification number: G11C11/4091 , G11C11/4094 , G11C11/4074 , G11C11/4076
Abstract: Various implementations described herein are related to a device having memory with sense amplifiers and precharge blocks arranged in an array with a first side and a second side. The first side has first sense amplifiers and first precharge blocks coupled together with first bitlines, and the second side has second sense amplifiers and second precharge blocks coupled together with second bitlines. The device has a first delay block coupled to the first precharge blocks in the first side of the array, and the first delay block delays precharge of the first bitlines with a first precharge burst in a multi-burst precharge event. The device has a second delay block coupled to the second precharge blocks in the second side of the array, and the second delay block delays precharge of the second bitlines with a second precharge burst in the multi-burst precharge event.
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公开(公告)号:US20240055047A1
公开(公告)日:2024-02-15
申请号:US17885709
申请日:2022-08-11
Applicant: Arm Limited
Inventor: Edward Martin McCombs, JR. , Andrew David Tune , Sean James Salisbury , Rahul Mathur , Hsin-Yu Chen , Phani Raja Bhushan Chalasani
IPC: G11C11/4096 , G11C11/4094 , G11C11/408 , G11C11/4091
CPC classification number: G11C11/4096 , G11C11/4094 , G11C11/408 , G11C11/4091
Abstract: A burst read with flexible burst length for on-chip memory, such as, for example, system cache memory, hierarchical cache memory, system memory, etc. is provided. Advantageously, successive burst reads are performed with less signal toggling and fewer bitline swings.
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公开(公告)号:US20240055034A1
公开(公告)日:2024-02-15
申请号:US17885747
申请日:2022-08-11
Applicant: Arm Limited
Inventor: Edward Martin McCombs, JR.
Abstract: An on-chip memory is provided. The memory includes wordline sections, input/output (I/O) circuitry, and control circuitry. Each wordline section includes a number of wordlines, and each wordline section is coupled to a different wordline control circuitry. The control circuitry is configured to, in response to receiving an access request including an address, decode the address including determine, based on the address, an associated wordline, and determine, based on the associated wordline, an associated wordline section. The control circuitry is further configured to apply power to wordline control circuitry coupled to the associated wordline section, and access the address.
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公开(公告)号:US20240054073A1
公开(公告)日:2024-02-15
申请号:US17885780
申请日:2022-08-11
Applicant: Arm Limited
Inventor: Andrew David Tune , Sean James Salisbury , Edward Martin McCombs, JR.
IPC: G06F12/0802
CPC classification number: G06F12/0802 , G06F2212/60
Abstract: Circuitry including cache storage and control circuitry is provided. The cache storage includes an array of random access memory storage elements, and is configured to store data in multiple cache sectors, each cache sector including a number of cache storage data units. The control circuitry is configured to control access to the cache storage including, for example, accessing the cache storage data units in the cache sectors. After accessing a cache storage data unit in a cache sector, the energy requirement and/or latency for the next access to a cache storage data unit in the same sector is lower than the energy requirement and/or latency for the next access to a cache storage data unit in a different same sector.
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