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公开(公告)号：US07804391B2
公开(公告)日：2010-09-28
申请号：US11758746
申请日：2007-06-06
IPC分类号： H01C10/00
CPC分类号： H01L28/20 , H01C7/006 , H01C17/242 , Y10T29/49082 , Y10T29/49099 , Y10T29/49105
摘要： An electrical structure. The electrical structure includes a resistor having a length L and an electrical resistance R(t) at a time t; and a laser radiation directed onto a portion of the resistor, wherein the portion of the resistor includes a fraction F of the length L, wherein the laser radiation heats the portion of the resistor such that the electrical resistance R(t) instantaneously changes at a rate dR/dt, and wherein the resistor is coupled to a semiconductor substrate.
摘要翻译： 电气结构。 电气结构包括在时间t具有长度L和电阻R（t）的电阻器; 以及引导到电阻器的一部分的激光辐射，其中电阻器的该部分包括长度为L的分数F，其中激光辐射加热电阻器的部分，使得电阻R（t）瞬时地在 速率dR / dt，并且其中所述电阻器耦合到半导体衬底。
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公开(公告)号：US06647614B1
公开(公告)日：2003-11-18
申请号：US09693765
申请日：2000-10-20
IPC分类号： H01C1700
CPC分类号： H01L28/20 , H01C7/006 , H01C17/242 , Y10T29/49082 , Y10T29/49099 , Y10T29/49105
摘要： A method for changing an electrical resistance of a resistor. Initially, the resistor is provided, wherein the resistor has a length L and an electrical resistance R1. A portion of the resistor is exposed to a laser radiation, wherein the portion includes a fraction F of the length L of the resistor. After the resistor has been exposed to the laser radiation, the resistor has an electrical resistance R2, wherein R2 is unequal to R1.
摘要翻译： 一种改变电阻器电阻的方法。 首先，提供电阻器，其中电阻器具有长度L和电阻R1。 电阻器的一部分暴露于激光辐射，其中该部分包括电阻器长度L的分数F. 在电阻器暴露于激光辐射之后，电阻器具有电阻R2，其中R2不等于R1。
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公开(公告)号：US06862799B2
公开(公告)日：2005-03-08
申请号：US10636110
申请日：2003-08-07
IPC分类号： H01C17/242 , H01C17/00
CPC分类号： H01L28/20 , H01C7/006 , H01C17/242 , Y10T29/49082 , Y10T29/49099 , Y10T29/49105
摘要： A method for changing an electrical resistance of a resistor. Initially, the resistor is provided, wherein the resistor has a length L and an electrical resistance R1. A portion of the resistor is exposed to a laser radiation, wherein the portion includes a fraction F of the length L of the resistor. After the resistor has been exposed to the laser radiation, the resistor has an electrical resistance R2, wherein R2 is unequal to R1.
摘要翻译： 一种改变电阻器电阻的方法。 首先，提供电阻器，其中电阻器具有长度L和电阻R1。 电阻器的一部分暴露于激光辐射，其中该部分包括电阻器长度L的分数F. 在电阻器暴露于激光辐射之后，电阻器具有电阻R2，其中R2不等于R1。
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公开(公告)号：US07271699B2
公开(公告)日：2007-09-18
申请号：US10691881
申请日：2003-10-23
IPC分类号： H01C10/00
CPC分类号： H01L28/20 , H01C7/006 , H01C17/242 , Y10T29/49082 , Y10T29/49099 , Y10T29/49105
摘要： A resistor and a structure for changing an electrical resistance of a resistor. Initially, the resistor is provided, wherein the resistor has a length L and an electrical resistance R1. A portion of the resistor is exposed to a laser radiation, wherein the portion includes a fraction F of the length L of the resistor. After the resistor has been exposed to the laser radiation, the resistor has an electrical resistance R2, wherein R2 is unequal to R1.
摘要翻译： 用于改变电阻器的电阻的电阻器和结构。 最初，提供电阻器，其中电阻器具有长度L和电阻R 1。 电阻器的一部分暴露于激光辐射，其中该部分包括电阻器长度L的分数F. 在电阻器暴露于激光辐射之后，电阻器具有电阻R 2，其中R 2不等于R 1。
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公开(公告)号：US08440522B2
公开(公告)日：2013-05-14
申请号：US11968686
申请日：2008-01-03
IPC分类号： H01L21/8234 , H01L21/20
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method for increasing an electrical resistance of a resistor that is within a semiconductor structure. A fraction of a surface layer of the resistor is oxidized with oxygen particles. In an embodiment, the fraction of the surface layer is heated by a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen particles as gaseous oxygen-comprising molecules. In an embodiment, the semiconductor structure is immersed in a chemical solution which includes the oxygen particles, wherein the oxygen particles includes oxygen-comprising liquid molecules, oxygen ions, or an oxygen-comprising gas dissolved in the chemical solution under pressurization. In an embodiment, the resistor is tested to determine whether the electrical resistance of the resistor after being oxidized with the oxygen particles is within a tolerance of a predetermined target resistance.
摘要翻译： 一种用于增加在半导体结构内的电阻器的电阻的方法。 电阻的表面层的一部分被氧颗粒氧化。 在一个实施方案中，表面层的分数由颗粒束加热，使得半导体结构在包含作为气态含氧分子的氧颗粒的室内。 在一个实施方案中，将半导体结构浸入包括氧颗粒的化学溶液中，其中氧颗粒包括在加压下溶解在化学溶液中的含氧液体分子，氧离子或含氧气体。 在一个实施例中，测试电阻器以确定在用氧颗粒氧化后电阻器的电阻是否在预定目标电阻的容限内。
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公开(公告)号：US20080314754A1
公开(公告)日：2008-12-25
申请号：US12202487
申请日：2008-09-02
IPC分类号： C25D11/32
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method for increasing an electrical resistance of a resistor. A fraction F of an exterior surface of a surface layer of a resistor of a semiconductor structure is exposed to the nitrogen-comprising molecules. An anodization electrical circuit is formed and includes: a DC power supply, an electrolytic solution including nitrogen, and the resistor partially immersed in the electrolytic solution. The DC power supply is activated and generates a voltage output, that causes an electrolytic reaction in the electrolytic solution near the resistor. The electrolytic reaction generates nitrogen ions from the nitrogen in the electrolytic solution. The fraction F is exposed to the nitrogen ions. A portion of the surface layer is nitridized by being reacted with the nitrogen ions at a temperature above ambient room temperature such that an electrical resistance of the resistor is increased.
摘要翻译： 一种用于增加电阻器的电阻的方法。 半导体结构的电阻器的表面层的外表面的分数F暴露于含氮分子。 形成阳极氧化电路，包括：直流电源，含氮的电解液，部分浸入电解液中的电阻。 直流电源被激活，产生电压输出，导致电解液附近的电解液中产生电解反应。 电解反应从电解液中的氮中产生氮离子。 馏分F暴露于氮离子。 通过在高于环境室温的温度下与氮离子反应使表面层的一部分氮化，使得电阻器的电阻增加。
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公开(公告)号：US07456074B2
公开(公告)日：2008-11-25
申请号：US11836308
申请日：2007-08-09
IPC分类号： H01L21/20
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method for increasing an electrical resistance of a resistor, by nitridizing a fraction of a surface layer of the resistor with nitrogen particles. An embodiment comprises heating the fraction of the surface layer by a beam of radiation or particles, such that the resistor is within a chamber that includes the nitrogen-comprising molecules. An embodiment comprises using an anodization circuit to electrolytically generate nitrogen ions in an electrolytic solution in which the resistor is immersed, wherein the nitrogen particles include the electrolytically-generated nitrogen ions. An embodiment comprises immersing the resistor in a chemical solution which includes the nitrogen particles, wherein the nitrogen particles may include nitrogen-comprising liquid molecules, nitrogen ions, or a nitrogen-comprising gas dissolved in the chemical solution under pressurization. An embodiment comprises testing the resistor during a nitridizing step to determine whether the electrical resistance of the resistor is within a tolerance.
摘要翻译： 通过用氮颗粒氮化电阻表面层的一部分来提高电阻器的电阻的方法。 一个实施方案包括通过辐射束或颗粒束加热表面层的部分，使得电阻在包含含氮分子的室内。 一个实施例包括使用阳极氧化电路在其中浸入电阻器的电解液中电解产生氮离子，其中氮颗粒包括电解产生的氮离子。 一个实施方案包括将电阻器浸入包括氮颗粒的化学溶液中，其中氮颗粒可以包括在加压下溶解在化学溶液中的含氮液体分子，氮离子或含氮气体。 一个实施例包括在氮化步骤期间测试电阻器以确定电阻器的电阻是否在公差范围内。
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公开(公告)号：US07351639B2
公开(公告)日：2008-04-01
申请号：US10753241
申请日：2004-01-08
IPC分类号： H01L21/20
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. The semiconductor structure may include a semiconductor wafer, a semiconductor chip, and an integrated circuit. The method and structure comprises five embodiments. The first embodiment comprises heating an interior of a heating chamber that includes the oxygen/nitrogen particles as gaseous oxygen/nitrogen-comprising molecules (e.g., molecular oxygen/nitrogen). The second embodiment comprises heating the fraction of the surface layer by a beam of radiation (e.g., laser radiation), or a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen/particles as gaseous oxygen/nitrogen-comprising molecules (e.g., molecular oxygen/nitrogen). The third embodiment comprises: using a plasma chamber to generate plasma oxygen/nitrogen ions; and applying a DC voltage to the plasma oxygen/nitrogen ions to accelerate the plasma oxygen/nitrogen ions into the resistor such that the oxygen/nitrogen particles include the plasma oxygen/nitrogen ions. The fourth embodiment comprises using an anodization circuit to electrolytically generate oxygen/nitrogen ions in an electrolytic solution in which the resistor is immersed, wherein the oxygen/nitrogen particles include the electrolytically-generated oxygen/nitrogen ions. The fifth embodiment comprises immersing the semiconductor structure in a chemical solution which includes the oxygen/nitrogen particles, wherein the oxygen/nitrogen particles may include oxygen/nitrogen-comprising liquid molecules, oxygen/nitrogen ions, or an oxygen/nitrogen-comprising gas dissolved in the chemical solution under pressurization.
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公开(公告)号：US06730984B1
公开(公告)日：2004-05-04
申请号：US09712391
申请日：2000-11-14
IPC分类号： H01L2900
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. The semiconductor structure may include a semiconductor wafer, a semiconductor chip, and an integrated circuit. The method and structure comprises five embodiments. The first embodiment comprises heating an interior of a heating chamber that includes the oxygen/nitrogen particles as gaseous oxygen/nitrogen-comprising molecules (e.g., molecular oxygen/nitrogen). The second embodiment comprises heating the fraction of the surface layer by a beam of radiation (e.g., laser radiation), or a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen/particles as gaseous oxygen/nitrogen-comprising molecules (e.g., molecular oxygen/nitrogen). The third embodiment comprises: using a plasma chamber to generate plasma oxygen/nitrogen ions; and applying a DC voltage to the plasma oxygen/nitrogen ions to accelerate the plasma oxygen/nitrogen ions into the resistor such that the oxygen/nitrogen particles include the plasma oxygen/nitrogen ions. The fourth embodiment comprises using an anodization circuit to electrolytically generate oxygen/nitrogen ions in an electrolytic solution in which the resistor is immersed, wherein the oxygen/nitrogen particles include the electrolytically-generated oxygen/nitrogen ions. The fifth embodiment comprises immersing the semiconductor structure in a chemical solution which includes the oxygen/nitrogen particles, wherein the oxygen/nitrogen particles may include oxygen/nitrogen-comprising liquid molecules, oxygen/nitrogen ions, or an oxygen/nitrogen-comprising gas dissolved in the chemical solution under pressurization.
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公开(公告)号：US20090011526A1
公开(公告)日：2009-01-08
申请号：US12202511
申请日：2008-09-02
CPC分类号： C23C8/02 , C23C8/04 , C23C8/10 , C23C8/24 , C25D11/00 , C25D11/02 , C25D11/026 , H01C7/006 , H01C17/26 , H01L21/263 , H01L27/0802 , H01L29/8605 , Y10S257/904 , Y10S257/914
摘要： A method for increasing an electrical resistance of a resistor. A semiconductor structure that includes the resistor is placed in a chamber that includes a gas including nitrogen-containing molecules at an nitrogen concentration. A fraction F of an exterior surface of a surface layer of the resistor is exposed to the nitrogen-comprising molecules. A portion of the surface layer is heated at a heating temperature. A combination of the nitrogen concentration and the heating temperature is sufficient to nitridize the portion of the surface layer by reacting the portion with the nitrogen-containing molecules. Heating the portion of the surface layer includes directing a beam of radiation or particles into the portion of the surface layer heat the portion of the surface layer. The portion of the surface layer is nitridized by being reacted with the nitrogen-containing molecules such that an electrical resistance of the resistor is increased.
摘要翻译： 一种用于增加电阻器的电阻的方法。 包括电阻器的半导体结构被放置在包括含氮浓度的含氮分子的气体的室中。 电阻器的表面层的外表面的分数F暴露于含氮分子。 表面层的一部分在加热温度下被加热。 氮浓度和加热温度的组合足以通过使该部分与含氮分子反应来氮化表面层的部分。 加热表面层的部分包括将辐射束或颗粒引导到表面层的部分中加热表面层的该部分。 通过与含氮分子反应使表面层的部分氮化，使得电阻器的电阻增加。
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