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公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07767520B2
公开(公告)日：2010-08-03
申请号：US11888949
申请日：2007-08-03
IPC分类号： H01L21/8242
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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公开(公告)号：US20080042212A1
公开(公告)日：2008-02-21
申请号：US11888942
申请日：2007-08-03
IPC分类号： H01L27/092
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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公开(公告)号：US20140299883A1
公开(公告)日：2014-10-09
申请号：US14311044
申请日：2014-06-20
IPC分类号： H01L29/786
CPC分类号： H01L29/7866 , B82Y10/00 , H01L27/1248 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78681 , H01L29/7869
摘要： A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.
摘要翻译： 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。
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7.发明申请Printing of Contact Metal and Interconnect Metal Via Seed Printing and Plating 有权通过种子印刷和电镀印刷接触金属和互连金属公开(公告)号：US20120181636A1
公开(公告)日：2012-07-19
申请号：US13427091
申请日：2012-03-22
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L29/772 , H01L23/485 , H01L21/336
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。
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8.发明授权Methods of making metal silicide contacts, interconnects, and/or seed layers 有权制造金属硅化物接触，互连和/或种子层的方法公开(公告)号：US08158518B2
公开(公告)日：2012-04-17
申请号：US12175450
申请日：2008-07-17
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物 联系。 任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。 此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。
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公开(公告)号：US08796125B2
公开(公告)日：2014-08-05
申请号：US11818078
申请日：2007-06-12
CPC分类号： H01L29/7866 , B82Y10/00 , H01L27/1248 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78681 , H01L29/7869
摘要： A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.
摘要翻译： 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。
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公开(公告)号：US08617992B2
公开(公告)日：2013-12-31
申请号：US13427091
申请日：2012-03-22
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。
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